MOVPE-based localized epitaxial growth techniques and its applications

As the functionality of InP-based photonic integrated circuits (PICs) is increasing rapidly and a wider range of components are integrated on a single chip, there is a need for advanced epitaxial techniques which enable the formation of regions with different bandgap energy simultaneously in a single epitaxial growth step. In this paper two MOVPE-based technologies which have the potential to meet those requirements are reviewed: selective area growth (SAG) and shadow masked growth (SMG)