Selective and shadow masked MOVPE growth of InP/InGaAs(P) heterostructures and quantum wells

Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE

Feng, W (Feng, W.)
Pan, JQ (Pan, J. Q.)
Zhou, F (Zhou, F.)
Zhao, LJ (Zhao, L. J.)
Zhu, HL (Zhu, H. L.)
Wang, W (Wang, W.)
Feng, W, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.

January 2006

Oxide-free InGaAlAs waveguides have been grown on the InP substrates patterned with pairs of SiO2 ma...

Selective Area Metal Organic Chemical Vapor Deposition Approaches for Novel Electronics and Photonic Integration

Suran Brunelli, Simone Tommaso

January 2021

With the advent of things like autonomous vehicles, augmented reality, high-capacity wireless networ...

AlGaInAs narrow stripe selective growth on substrates patterned with different mask designs

Feng W
Pan JQ
Yang H
Hou LP
Zhou F
Zhao LJ
Zhu HL
Wang W
Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wfeng@semi.ac.cn

January 2006

We have performed a narrow stripe selective growth of oxide-free A1GaInAs waveguides on InP substrat...

Selective and shadow masked MOVPE growth of InP/InGaAs(P) heterostructures and quantum wells

Coudenys, Geert
Moerman, Ingrid
Vanderbauwhede, Wim
Van Daele, Peter
Demeester, Piet

January 1992

We have investigated two growth techniques for lateral bandgap engineering over a substrate. Both se...

NONPLANAR MOVPE GROWTH USING A NOVEL SHADOW-MASKING TECHNIQUE

Demeester, Piet
BUYDENS, L.
Moerman, Ingrid
LOOTENS, D.
Van Daele, Peter

January 1991

The growth of GaAs/AlGaAs multilayer structures on shadow-masked substrates by metalorganic vapour p...

Lateral bandgap engineering for InP-based photonic integrated circuits

Coudenys, Geert
Moerman, Ingrid
Zhu, Y.
Van Daele, Peter
Demeester, Piet

January 1992

It is demonstrated that both SMG (shadow masked growth) and SG (selective growth) together with the ...

Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE

Feng W
Pan WWJQ
Zhu HL
Zhao LJ
Zhou F
Wang LF
Wang BJ
Bian J
An X
Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

January 2006

Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE has been studied. Both the ...

Growth on patterned substrates for optoelectronic device application

Gupta, Vinod Kumar

January 1998

In this thesis growth on patterned substrates has been studied for the lateral bandgap control of th...

Post-Growth Bandgap Engineering in InP

Yanson, D.A.
Kowalski, O.P.
McDougall, S.D.
Marsh, J.H.

January 2005

We report novel quantum-well intermixing techniques that allow multiple bandgaps to be generated on ...

Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE

Feng W (Feng W.)
Pan JQ (Pan J. Q.)
Zhou F (Zhou F.)
Yang H (Yang H.)
Zhao LJ (Zhao L. J.)
Zhu HL (Zhu H. L.)
Wang W (Wang W.)
Feng, W, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100080, Peoples R China. E-mail: wfeng@semi.ac.cn

January 2006

Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs multiple quantum wells (MQWs) has bee...

MOVPE-based localized epitaxial growth techniques and its applications

Moerman, Ingrid
Van Caenegem, Tom
Van Daele, Peter
Demeester, Piet

January 1997

As the functionality of InP-based photonic integrated circuits (PICs) is increasing rapidly and a wi...

Comparative analysis of growth rate reductions on shadow masked substrates

De Vlamyck, K
Coudenys, G
Demeester, Piet

January 1991

The growth on shadow masked substrates by atmospheric pressure metalorganic vapor phase epitaxy is i...

Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE

Feng, Wen
Wang, Wei
Zhu, Hongliang
Zhao, Lingjuan
Hou, Lianping
Pan, Jiaoqing

October 2005

Narrow stripe selective MOVPE has been used to grow high quality oxide-free InGaAlAs layers on an In...

Controlling the properties of InGaAs quantum dots by selective-area epitaxy

Mokkapati, Sudha
Lever, P.
Tan, H. H.
Jagadish, C.
McBean, K. E.
Phillips, M. R.

Selective growth of InGaAsInGaAs quantum dots on GaAsGaAs is reported. It is demonstrated that selec...

Quantum well devices fabricated using selective area growth and their application in optical fiber communication

Liudvih, Pavel

December 2013

In this thesis we discuss the advantage of the selective area growth (SAG) approach to manufacturing...

Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE

Feng, W (Feng, W.)
Pan, JQ (Pan, J. Q.)
Zhou, F (Zhou, F.)
Zhao, LJ (Zhao, L. J.)
Zhu, HL (Zhu, H. L.)
Wang, W (Wang, W.)
Feng, W, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.

January 2006

Oxide-free InGaAlAs waveguides have been grown on the InP substrates patterned with pairs of SiO2 ma...

Selective Area Metal Organic Chemical Vapor Deposition Approaches for Novel Electronics and Photonic Integration

Suran Brunelli, Simone Tommaso

January 2021

With the advent of things like autonomous vehicles, augmented reality, high-capacity wireless networ...

AlGaInAs narrow stripe selective growth on substrates patterned with different mask designs

Feng W
Pan JQ
Yang H
Hou LP
Zhou F
Zhao LJ
Zhu HL
Wang W
Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wfeng@semi.ac.cn

January 2006

We have performed a narrow stripe selective growth of oxide-free A1GaInAs waveguides on InP substrat...

Selective and shadow masked MOVPE growth of InP/InGaAs(P) heterostructures and quantum wells

Coudenys, Geert
Moerman, Ingrid
Vanderbauwhede, Wim
Van Daele, Peter
Demeester, Piet

January 1992

We have investigated two growth techniques for lateral bandgap engineering over a substrate. Both se...

NONPLANAR MOVPE GROWTH USING A NOVEL SHADOW-MASKING TECHNIQUE

Demeester, Piet
BUYDENS, L.
Moerman, Ingrid
LOOTENS, D.
Van Daele, Peter

January 1991

The growth of GaAs/AlGaAs multilayer structures on shadow-masked substrates by metalorganic vapour p...

Lateral bandgap engineering for InP-based photonic integrated circuits

Coudenys, Geert
Moerman, Ingrid
Zhu, Y.
Van Daele, Peter
Demeester, Piet

January 1992

It is demonstrated that both SMG (shadow masked growth) and SG (selective growth) together with the ...

Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE

Feng W
Pan WWJQ
Zhu HL
Zhao LJ
Zhou F
Wang LF
Wang BJ
Bian J
An X
Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.

January 2006

Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE has been studied. Both the ...

Growth on patterned substrates for optoelectronic device application

Gupta, Vinod Kumar

January 1998

In this thesis growth on patterned substrates has been studied for the lateral bandgap control of th...

Post-Growth Bandgap Engineering in InP

Yanson, D.A.
Kowalski, O.P.
McDougall, S.D.
Marsh, J.H.

January 2005

We report novel quantum-well intermixing techniques that allow multiple bandgaps to be generated on ...

Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE

Feng W (Feng W.)
Pan JQ (Pan J. Q.)
Zhou F (Zhou F.)
Yang H (Yang H.)
Zhao LJ (Zhao L. J.)
Zhu HL (Zhu H. L.)
Wang W (Wang W.)
Feng, W, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100080, Peoples R China. E-mail: wfeng@semi.ac.cn

January 2006

Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs multiple quantum wells (MQWs) has bee...

MOVPE-based localized epitaxial growth techniques and its applications

Moerman, Ingrid
Van Caenegem, Tom
Van Daele, Peter
Demeester, Piet

January 1997

As the functionality of InP-based photonic integrated circuits (PICs) is increasing rapidly and a wi...

Comparative analysis of growth rate reductions on shadow masked substrates

De Vlamyck, K
Coudenys, G
Demeester, Piet

January 1991

The growth on shadow masked substrates by atmospheric pressure metalorganic vapor phase epitaxy is i...

Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE

Feng, Wen
Wang, Wei
Zhu, Hongliang
Zhao, Lingjuan
Hou, Lianping
Pan, Jiaoqing

October 2005

Narrow stripe selective MOVPE has been used to grow high quality oxide-free InGaAlAs layers on an In...

Controlling the properties of InGaAs quantum dots by selective-area epitaxy

Mokkapati, Sudha
Lever, P.
Tan, H. H.
Jagadish, C.
McBean, K. E.
Phillips, M. R.

Selective growth of InGaAsInGaAs quantum dots on GaAsGaAs is reported. It is demonstrated that selec...

Quantum well devices fabricated using selective area growth and their application in optical fiber communication

Liudvih, Pavel

December 2013

In this thesis we discuss the advantage of the selective area growth (SAG) approach to manufacturing...

Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE

Feng, W (Feng, W.)
Pan, JQ (Pan, J. Q.)
Zhou, F (Zhou, F.)
Zhao, LJ (Zhao, L. J.)
Zhu, HL (Zhu, H. L.)
Wang, W (Wang, W.)
Feng, W, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.

January 2006

Oxide-free InGaAlAs waveguides have been grown on the InP substrates patterned with pairs of SiO2 ma...

Selective Area Metal Organic Chemical Vapor Deposition Approaches for Novel Electronics and Photonic Integration

Suran Brunelli, Simone Tommaso

January 2021

With the advent of things like autonomous vehicles, augmented reality, high-capacity wireless networ...

AlGaInAs narrow stripe selective growth on substrates patterned with different mask designs

Feng W
Pan JQ
Yang H
Hou LP
Zhou F
Zhao LJ
Zhu HL
Wang W
Feng, W, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: wfeng@semi.ac.cn

January 2006

We have performed a narrow stripe selective growth of oxide-free A1GaInAs waveguides on InP substrat...

Selective and shadow masked MOVPE growth of InP/InGaAs(P) heterostructures and quantum wells

Abstract

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Selective and shadow masked MOVPE growth of InP/InGaAs(P) heterostructures and quantum wells

Abstract

Extracted data

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