Process-induced variability is a growing concern in the design of analog circuits, and in particular for monolithic microwave integrated circuits (MMICs) targeting the 5G and 6G communication systems. The RF and microwave (MW) technologies developed for the deployment of these communication systems exploit devices whose dimension is now well below 100 nm, featuring an increasing variability due to the fabrication process tolerances and the inherent statistical behavior of matter at the nanoscale. In this scenario, variability analysis must be incorporated into circuit design and optimization, with ad hoc models retaining a direct link to the fabrication process and addressing typical MMIC nonlinear applications like power amplification and ...
A new, efficient approach to the sensitivity analysis of majority carrier and bipolar microwave semi...
Scaling of CMOS technology into the deep-submicron regime has made superior device performance and h...
Process variability is a major challenge for the design of nano scale MOSFETs due to fundamental phy...
Process-induced variability is a growing concern in the design of analog circuits, and in particular...
Process Induced Variability (PIV) stemming from fabrication tolerance can impact the performance of ...
An accurate, yet computationally efficient, Computer Aided Design (CAD) framework is proposed for th...
We propose a numerically efficient technique for the mixed-mode physics-based variability analysis o...
We propose a novel numerical approach for the microwave circuit variability analysis through efficie...
On overview on the state of the art and future trends in physics-based electron device modelling for...
In the present article we present a comprehensive variability analysis of microwave power amplifiers...
Abstract The operation of high-frequency devices, including microwave passive components, can be imp...
Vita.Significant improvements to microwave circuits can be made through the use of statistical metho...
We propose various techniques extending X parameters to include the effect of active microwave devic...
The linkage between a physical device simulator for small- and large-signal characterization and CAD...
Model accuracy is a key consideration when using circuit simulation for microwave designs in general...
A new, efficient approach to the sensitivity analysis of majority carrier and bipolar microwave semi...
Scaling of CMOS technology into the deep-submicron regime has made superior device performance and h...
Process variability is a major challenge for the design of nano scale MOSFETs due to fundamental phy...
Process-induced variability is a growing concern in the design of analog circuits, and in particular...
Process Induced Variability (PIV) stemming from fabrication tolerance can impact the performance of ...
An accurate, yet computationally efficient, Computer Aided Design (CAD) framework is proposed for th...
We propose a numerically efficient technique for the mixed-mode physics-based variability analysis o...
We propose a novel numerical approach for the microwave circuit variability analysis through efficie...
On overview on the state of the art and future trends in physics-based electron device modelling for...
In the present article we present a comprehensive variability analysis of microwave power amplifiers...
Abstract The operation of high-frequency devices, including microwave passive components, can be imp...
Vita.Significant improvements to microwave circuits can be made through the use of statistical metho...
We propose various techniques extending X parameters to include the effect of active microwave devic...
The linkage between a physical device simulator for small- and large-signal characterization and CAD...
Model accuracy is a key consideration when using circuit simulation for microwave designs in general...
A new, efficient approach to the sensitivity analysis of majority carrier and bipolar microwave semi...
Scaling of CMOS technology into the deep-submicron regime has made superior device performance and h...
Process variability is a major challenge for the design of nano scale MOSFETs due to fundamental phy...