The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Si1-x Ge(x):H alloy films was determined by means of field effect tecnique. The specimens were grown at different percentages of Ge. The DOS of the films shows a behaviour related to the content of germanium and it is independent of the presence of additional hydrogen in discharge
Hall mobility, mu(H), and electrical conductivity, sigma, of unhydrogenated amorphous-gallium-arseni...
Measurements using photothermal deflection spectroscopy (PDS) have been performed on samples of amor...
Hall mobility, mu(H), and electrical conductivity, sigma, of unhydrogenated amorphous-gallium-arseni...
The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Si1-x Ge(x)...
The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Si1-x Ge(x)...
Hydrogenated amorphous silicon-germanium alloy films have been prepared by rf glow discharge decompo...
A correlation between the midgap-defect-state density and the Urbach energy is experimentally observ...
The changes in gap state density with increasing Ge concentration in glow-discharge a-Si/sub 1-x/Ge/...
The effects of adding small quantities of gallium atoms to hydrogenated amorphous germanium (a-Ge:H)...
The elemental composition and the optical properties of hydrogenated amorphous GaAs prepared by r.f....
The density of localized gap states N(E) is calculated using a new scheme, which computes the charge...
Hall mobility, mu(H), and electrical conductivity, sigma, of unhydrogenated amorphous-gallium-arseni...
Measurements using photothermal deflection spectroscopy (PDS) have been performed on samples of amor...
Hall mobility, mu(H), and electrical conductivity, sigma, of unhydrogenated amorphous-gallium-arseni...
The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Si1-x Ge(x)...
The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Si1-x Ge(x)...
Hydrogenated amorphous silicon-germanium alloy films have been prepared by rf glow discharge decompo...
A correlation between the midgap-defect-state density and the Urbach energy is experimentally observ...
The changes in gap state density with increasing Ge concentration in glow-discharge a-Si/sub 1-x/Ge/...
The effects of adding small quantities of gallium atoms to hydrogenated amorphous germanium (a-Ge:H)...
The elemental composition and the optical properties of hydrogenated amorphous GaAs prepared by r.f....
The density of localized gap states N(E) is calculated using a new scheme, which computes the charge...
Hall mobility, mu(H), and electrical conductivity, sigma, of unhydrogenated amorphous-gallium-arseni...
Measurements using photothermal deflection spectroscopy (PDS) have been performed on samples of amor...
Hall mobility, mu(H), and electrical conductivity, sigma, of unhydrogenated amorphous-gallium-arseni...