The density of states in the mobility gap of a-Si1-x Ge x films.

The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Si1-x Ge(x):H alloy films was determined by means of field effect tecnique. The specimens were grown at different percentages of Ge. The DOS of the films shows a behaviour related to the content of germanium and it is independent of the presence of additional hydrogen in discharge