A correlation between the midgap-defect-state density and the Urbach energy is experimentally observed in undoped hydrogenated amorphous germanium (a-Ge:H) thin films prepared by the glow-discharge technique under different conditions. Since these samples show thermally induced metastable effects, the data are analyzed with a thermal-equilibration model recently proposed for a-Si:H. This yields a neutral Ge dangling-bond (D/sup 0/) energy at 0.50-0.55 eV above the valence-band edge
The effect of hydrogenation on the local order in amorphous germanium has been studied by EXAFS. Mea...
Hydrogenated amorphous silicon germanium alloy thin films prepared by Plasma Enhanced Chemical Vapor...
The effects of adding small quantities of gallium atoms to hydrogenated amorphous germanium (a-Ge:H)...
A correlation between the midgap-defect-state density and the Urbach energy is experimentally observ...
The correlations between the defect density, N D, Fermi energy, E F, and Urbach tail, E 0, are exami...
The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Si1-x Ge(x)...
Hydrogenated amorphous silicon-germanium alloy films have been prepared by rf glow discharge decompo...
Effects of native and light induced defects states in hydrogenated amorphous silicon-germanium alloy...
The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Si1-x Ge(x)...
The changes in gap state density with increasing Ge concentration in glow-discharge a-Si/sub 1-x/Ge/...
The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Si1-x Ge(x)...
The density of localized gap states in the bulk and in the near-surface region of amorphous hydrogen...
Light-induced metastable changes in the conductivity of hydrogenated amorphous germanium (a-Ge:H) th...
The authors report on the optoelectronic properties of high-quality a-Ge:H films prepared by the RF ...
Carius R, Stiebig H, Siebke F, Fölsch J. Defect distributions in a-Si(x)Ge(1-x): H. Journal of Non-C...
The effect of hydrogenation on the local order in amorphous germanium has been studied by EXAFS. Mea...
Hydrogenated amorphous silicon germanium alloy thin films prepared by Plasma Enhanced Chemical Vapor...
The effects of adding small quantities of gallium atoms to hydrogenated amorphous germanium (a-Ge:H)...
A correlation between the midgap-defect-state density and the Urbach energy is experimentally observ...
The correlations between the defect density, N D, Fermi energy, E F, and Urbach tail, E 0, are exami...
The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Si1-x Ge(x)...
Hydrogenated amorphous silicon-germanium alloy films have been prepared by rf glow discharge decompo...
Effects of native and light induced defects states in hydrogenated amorphous silicon-germanium alloy...
The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Si1-x Ge(x)...
The changes in gap state density with increasing Ge concentration in glow-discharge a-Si/sub 1-x/Ge/...
The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Si1-x Ge(x)...
The density of localized gap states in the bulk and in the near-surface region of amorphous hydrogen...
Light-induced metastable changes in the conductivity of hydrogenated amorphous germanium (a-Ge:H) th...
The authors report on the optoelectronic properties of high-quality a-Ge:H films prepared by the RF ...
Carius R, Stiebig H, Siebke F, Fölsch J. Defect distributions in a-Si(x)Ge(1-x): H. Journal of Non-C...
The effect of hydrogenation on the local order in amorphous germanium has been studied by EXAFS. Mea...
Hydrogenated amorphous silicon germanium alloy thin films prepared by Plasma Enhanced Chemical Vapor...
The effects of adding small quantities of gallium atoms to hydrogenated amorphous germanium (a-Ge:H)...