An experimental theoretical atomic scale study In situ analysis of III V on Si 100 growth for hybrid solar cells

We consider GaP Si 100 as quasi substrate for III V on silicon growth targeting solar energy exploration in dual junction devices for both photovoltaics as well as photoelectrochemical tandem diodes with optimum bandgaps. We prepare Si 100 surfaces with majority domains of either type, grow thin GaP layers free of anti phase disorder, find that abrupt Si P interfaces are favored over abrupt Si Ga interfaces and, finally, observe an RAS signal attributed to N incorporation in GaPN Si 100 . Combining in situ reflection anisotropy spectroscopy during metalorganic vapor phase epitaxy with UHV based surface techniques and ab initio DFT calculations, we aim to understand the interface formation at the atomic scale