In situ access to the dielectric anisotropy of buried III V Si 100 heterointerfaces

We derive an analytical expression to extract the III V Si 100 surface and interface dielectric anisotropy from multisample optical in situ data. Based on the established preparation of P rich GaP Si 100 and GaP 100 surfaces in vapor phase ambient, thin GaP amp; 64257;lms on Si 100 serve as a model system, where we demonstrate the decomposition of re amp; 64258;ection anisotropy spectra to obtain surface and interface signals. The resulting surface dielectric anisotropy of P rich GaP Si 100 agrees well with that of a homoepitaxial P rich GaP 100 reference due to consideration of antiphase disorder in our analytical approach. Hence, we are able to calculate interface dielectric anisotropy spectra of individual GaP Si 100 samples. Their characteristic line shape provides in situ access to nucleation mechanisms in polar on nonpolar heteroepitax