A novel technique for precise temperature measurement of high power PHEMTs is presented. The method, based on the measurement of photogenerated current, is used to extract the temperature of the PHEMT channel. Evaluation of thermal resistance is presente
International audienceWe have developed two optical laser probes for the contactless characterisatio...
This paper proposes a synthesis of different electrical methods used to estimate the temperature of ...
There exists quite an extensive bibliography on the methods of contactless measurement of temperatur...
A novel technique for precise temperature measurement of high power PHEMTs is presented. The method,...
InGaAs/InP heterojunction bipolar transistors grown in a multi-wafer metal-organic chemicalvapor dep...
This paper presents a critical comparison of three different methods for the estimation of the therm...
Accurate and precise measurement of channel temperature for RF devices and especially for high power...
A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gat...
In this brief, we present a novel noninvasive method for spatially resolved thermal measurement of ...
A simple technique is proposed for the thermal resistance measurement of electron devices. The new a...
We report of time-resolved photocurrent thermography to measure transient temperatures in semiconduc...
A simple technique is proposed for the thermal resistance measurement of electron devices. The new a...
Gate junction temperature is presented as the crucial parameter for modeling thermal degradation in ...
We describe a technique of measurement for thermoelectric power S(T) at very low temperature. The ve...
This article presents the laboratory verification of the author’s algorithm for temperature determin...
International audienceWe have developed two optical laser probes for the contactless characterisatio...
This paper proposes a synthesis of different electrical methods used to estimate the temperature of ...
There exists quite an extensive bibliography on the methods of contactless measurement of temperatur...
A novel technique for precise temperature measurement of high power PHEMTs is presented. The method,...
InGaAs/InP heterojunction bipolar transistors grown in a multi-wafer metal-organic chemicalvapor dep...
This paper presents a critical comparison of three different methods for the estimation of the therm...
Accurate and precise measurement of channel temperature for RF devices and especially for high power...
A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gat...
In this brief, we present a novel noninvasive method for spatially resolved thermal measurement of ...
A simple technique is proposed for the thermal resistance measurement of electron devices. The new a...
We report of time-resolved photocurrent thermography to measure transient temperatures in semiconduc...
A simple technique is proposed for the thermal resistance measurement of electron devices. The new a...
Gate junction temperature is presented as the crucial parameter for modeling thermal degradation in ...
We describe a technique of measurement for thermoelectric power S(T) at very low temperature. The ve...
This article presents the laboratory verification of the author’s algorithm for temperature determin...
International audienceWe have developed two optical laser probes for the contactless characterisatio...
This paper proposes a synthesis of different electrical methods used to estimate the temperature of ...
There exists quite an extensive bibliography on the methods of contactless measurement of temperatur...