Hot electron model for the large-signal modelling of mm-wave GaAs transferred electron devices

This paper presents a detailed hot-electron physical device model suitable for the large-signal modelling of GaAs transferred electron devices. All results presented are compared with experimental results, essential for the verification and validation of the model especially for this inherently non-linear, circuit-dependent device. The incorporation of the conservation equations has a marked effect on the theoretical behaviour of the device. It is essential if high frequency and power devices are to be modelled accurately since electron relaxation effects play a much bigger role at higher frequencies and in harmonic generation