A technology-independent, non-quasi-static non-linear model of electron devices capable of accurate predictions at microwave and millimetre waves is proposed in this paper. The model is based on the definition of a quasi-static associated device, which is controlled by means of equivalent voltages. In particular, in the paper it is shown how to define and experimentally identify suitable voltage-controlled voltage sources, which modify the original domain of applied voltages and create a suitable control environment for the purely-quasi-static associated device. The advantage of this approach is that conventional purely quasi-static models can still be adopted even at very high frequencies, if suitable equivalent voltages are applied. Preli...
Non-quasi-static phenomena in a family of monolithic pHEMT devices has been researched. The results ...
Non-quasi-static phenomena in a family of monolithic pHEMT devices has been researched. The results ...
none3Non-quasi-static phenomena in a family of monolithic pHEMT devices has been researched. The res...
A technology-independent,non-quasi-staticnon-linear model of electron devicescapableofaccuratepredic...
A new nonquasi-static nonlinear model of electron devices is proposed by adopting a perturbed charge...
none6A new nonquasi-static nonlinear model of electron devices is proposed by adopting a perturbed ...
An overview of the main approaches to the nonlinear dynamic modeling of microwave electron devices i...
An overview of the main approaches to the nonlinear dynamic modeling of microwave electron devices i...
An overview of the main approaches to the nonlinear dynamic modeling of microwave electron devices i...
The accuracy of CAD techniques for the design of non-linear microwave circuits is strongly dependent...
A technology-independent model of microwave electron devices, the Nonlinear Integral Model, is propo...
This paper presents a detailed hot-electron physical device model suitable for the large-signal mode...
none6Theoretical and practical issues concerning the non-linear dynamic modelling of electron device...
This paper presents a detailed hot-electron physical device model suitable for the large-signal mode...
The present article analyzes in detail different intrinsic small-signal models for transistors. Part...
Non-quasi-static phenomena in a family of monolithic pHEMT devices has been researched. The results ...
Non-quasi-static phenomena in a family of monolithic pHEMT devices has been researched. The results ...
none3Non-quasi-static phenomena in a family of monolithic pHEMT devices has been researched. The res...
A technology-independent,non-quasi-staticnon-linear model of electron devicescapableofaccuratepredic...
A new nonquasi-static nonlinear model of electron devices is proposed by adopting a perturbed charge...
none6A new nonquasi-static nonlinear model of electron devices is proposed by adopting a perturbed ...
An overview of the main approaches to the nonlinear dynamic modeling of microwave electron devices i...
An overview of the main approaches to the nonlinear dynamic modeling of microwave electron devices i...
An overview of the main approaches to the nonlinear dynamic modeling of microwave electron devices i...
The accuracy of CAD techniques for the design of non-linear microwave circuits is strongly dependent...
A technology-independent model of microwave electron devices, the Nonlinear Integral Model, is propo...
This paper presents a detailed hot-electron physical device model suitable for the large-signal mode...
none6Theoretical and practical issues concerning the non-linear dynamic modelling of electron device...
This paper presents a detailed hot-electron physical device model suitable for the large-signal mode...
The present article analyzes in detail different intrinsic small-signal models for transistors. Part...
Non-quasi-static phenomena in a family of monolithic pHEMT devices has been researched. The results ...
Non-quasi-static phenomena in a family of monolithic pHEMT devices has been researched. The results ...
none3Non-quasi-static phenomena in a family of monolithic pHEMT devices has been researched. The res...