Numerical model of a 0.2 mu m AlCaAs/GaAs HEMT including electromagnetic effects

The paper presents an efficient approach to evaluate the performance of electron devices under non stationary operation through an accurate mixed physics-electromagnetic based model. The analysis couples a three-dimensional (3-D) time domain solution of Maxwell's equation to the electron device model. The electron devices model is based on a simplified version of the first three moments of the Boltzmann transport equation (BTE). By means the proposed physics based model a conventional 0.2 mu m HEMT has been simulated. The numerical results show the effect of the interaction between electron and fields on the behavior of high frequency FETs