For several years, SEMATECH has invested significant effort into extending 193 nm immersion lithography by developing a set of high index materials. For high index immersion lithography (HIL) to enable 1.70NA imaging, a high index lens element with an absorbance = 1.80, and a resist with an index >1.9 are needed. This paper reviews the success or failure of various HIL components and presents the top final material prospects and properties in each category. Since this abstract was submitted, the industry has decided to cease any effort in HIL, not because of fundamental showstoppers but because of timing. This choice was made even though the only currently available technology the can enable 32 nm and 22 nm manufacturing is double patternin...
According to the ITRS roadmap, DRAM half pitch (hp) will reach to 32 and 20 nm in 2012 and 2017 resp...
In this paper we demonstrate the many benefits of using immersion lithography that go beyond depth o...
For the next-generation immersion lithography technology, there is a growing interest in the immersi...
aIntel assignees to SEMATECH, bSEMATECH, and cMIT-LL For several years, SEMATECH has invested signi...
To identify the most practical and cost-effective technology after water immersion lithography (Gen1...
Generation-three (Gen-3) immersion lithography can be an enabler for the 32nm half-pitch node. For G...
The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of...
Generation-three (Gen-3) immersion lithography can be an enabler for the 32nm half-pitch node. For G...
The lithography industry has been working to extend 193 nm immersion with double patterning and comp...
Generation-three (Gen-3) immersion lithography offers the promise of enabling the 32nm half-pitch no...
photoresist, pellicle, high-index fluid, phase shift, double patterning Optical immersion lithograph...
We have performed high-index immersion fluid studies to define the levels of both soluble and insolu...
As immersion lithography will be the lithography technique for sub-65nm generation device fabricatio...
The proposed paper investigates the effects of ultra-pure water on DUV photoresist used in 193 nm im...
The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of...
According to the ITRS roadmap, DRAM half pitch (hp) will reach to 32 and 20 nm in 2012 and 2017 resp...
In this paper we demonstrate the many benefits of using immersion lithography that go beyond depth o...
For the next-generation immersion lithography technology, there is a growing interest in the immersi...
aIntel assignees to SEMATECH, bSEMATECH, and cMIT-LL For several years, SEMATECH has invested signi...
To identify the most practical and cost-effective technology after water immersion lithography (Gen1...
Generation-three (Gen-3) immersion lithography can be an enabler for the 32nm half-pitch node. For G...
The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of...
Generation-three (Gen-3) immersion lithography can be an enabler for the 32nm half-pitch node. For G...
The lithography industry has been working to extend 193 nm immersion with double patterning and comp...
Generation-three (Gen-3) immersion lithography offers the promise of enabling the 32nm half-pitch no...
photoresist, pellicle, high-index fluid, phase shift, double patterning Optical immersion lithograph...
We have performed high-index immersion fluid studies to define the levels of both soluble and insolu...
As immersion lithography will be the lithography technique for sub-65nm generation device fabricatio...
The proposed paper investigates the effects of ultra-pure water on DUV photoresist used in 193 nm im...
The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of...
According to the ITRS roadmap, DRAM half pitch (hp) will reach to 32 and 20 nm in 2012 and 2017 resp...
In this paper we demonstrate the many benefits of using immersion lithography that go beyond depth o...
For the next-generation immersion lithography technology, there is a growing interest in the immersi...