Generation-three (Gen-3) immersion lithography can be an enabler for the 32nm half-pitch node. For Gen-3 lithography to be successful, however, there must be three major breakthroughs in materials development: high refractive index ("high-index") tenses, high-index immersion fluids, and high-index photo-resists. Currently a material for a high-index lens element, lutetium aluminum garnet (LuAG), has been identified. However, suitable materials choices remain elusive for both the Gen-3 fluid and resist. This paper reviews the successes and failures in the search for Gen-3 high-index materials
The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of...
According to the ITRS roadmap, DRAM half pitch (hp) will reach to 32 and 20 nm in 2012 and 2017 resp...
According to the International Technology Roadmap for Semiconductors (ITRS), memory half pitch (hp) ...
Generation-three (Gen-3) immersion lithography can be an enabler for the 32nm half-pitch node. For G...
Generation-three (Gen-3) immersion lithography offers the promise of enabling the 32nm half-pitch no...
To identify the most practical and cost-effective technology after water immersion lithography (Gen1...
For several years, SEMATECH has invested significant effort into extending 193 nm immersion lithogra...
aIntel assignees to SEMATECH, bSEMATECH, and cMIT-LL For several years, SEMATECH has invested signi...
The need to extend 193nm immersion lithography necessitates the development of a third generation (G...
We have performed high-index immersion fluid studies to define the levels of both soluble and insolu...
The need to extend 193nm immersion lithography necessitates the development of a third generation (G...
The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of...
BaLiF3 single crystal has been studied as the lens material for the candidate of the next generation...
For the next-generation immersion lithography technology, there is a growing interest in the immersi...
photoresist, pellicle, high-index fluid, phase shift, double patterning Optical immersion lithograph...
The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of...
According to the ITRS roadmap, DRAM half pitch (hp) will reach to 32 and 20 nm in 2012 and 2017 resp...
According to the International Technology Roadmap for Semiconductors (ITRS), memory half pitch (hp) ...
Generation-three (Gen-3) immersion lithography can be an enabler for the 32nm half-pitch node. For G...
Generation-three (Gen-3) immersion lithography offers the promise of enabling the 32nm half-pitch no...
To identify the most practical and cost-effective technology after water immersion lithography (Gen1...
For several years, SEMATECH has invested significant effort into extending 193 nm immersion lithogra...
aIntel assignees to SEMATECH, bSEMATECH, and cMIT-LL For several years, SEMATECH has invested signi...
The need to extend 193nm immersion lithography necessitates the development of a third generation (G...
We have performed high-index immersion fluid studies to define the levels of both soluble and insolu...
The need to extend 193nm immersion lithography necessitates the development of a third generation (G...
The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of...
BaLiF3 single crystal has been studied as the lens material for the candidate of the next generation...
For the next-generation immersion lithography technology, there is a growing interest in the immersi...
photoresist, pellicle, high-index fluid, phase shift, double patterning Optical immersion lithograph...
The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of...
According to the ITRS roadmap, DRAM half pitch (hp) will reach to 32 and 20 nm in 2012 and 2017 resp...
According to the International Technology Roadmap for Semiconductors (ITRS), memory half pitch (hp) ...