We have performed high-index immersion fluid studies to define the levels of both soluble and insoluble impurities present. These studies have also revealed the importance of process materials ’ purity in fluid contact. Fluid interactions with resist, leading to both surface and imaging defects, can be minimized by proper resist selection. Our Active Recycle Package technology can greatly extend the useful life of both the fluid itself, as well as the final lens element
textThe semiconductor industry is continually challenged to maintain the trend identified in 1965 b...
textThe semiconductor industry is continually challenged to maintain the trend identified in 1965 b...
The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of...
To identify the most practical and cost-effective technology after water immersion lithography (Gen1...
High-index immersion fluids enabling cost-effective single-exposure lithography for 32 nm half pitch...
High-index immersion fluids enabling cost-effective single-exposure lithography for 32 nm half pitch...
photoresist, pellicle, high-index fluid, phase shift, double patterning Optical immersion lithograph...
For the next-generation immersion lithography technology, there is a growing interest in the immersi...
A study has been performed to determine the viability of phosphoric acid as a high-index fluid for i...
The search for successful generation 3 immersion lithography fluids is focused on high refractive in...
The need to extend 193nm immersion lithography necessitates the development of a third generation (G...
Generation-three (Gen-3) immersion lithography offers the promise of enabling the 32nm half-pitch no...
aIntel assignees to SEMATECH, bSEMATECH, and cMIT-LL For several years, SEMATECH has invested signi...
Generation-three (Gen-3) immersion lithography can be an enabler for the 32nm half-pitch node. For G...
Generation-three (Gen-3) immersion lithography can be an enabler for the 32nm half-pitch node. For G...
textThe semiconductor industry is continually challenged to maintain the trend identified in 1965 b...
textThe semiconductor industry is continually challenged to maintain the trend identified in 1965 b...
The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of...
To identify the most practical and cost-effective technology after water immersion lithography (Gen1...
High-index immersion fluids enabling cost-effective single-exposure lithography for 32 nm half pitch...
High-index immersion fluids enabling cost-effective single-exposure lithography for 32 nm half pitch...
photoresist, pellicle, high-index fluid, phase shift, double patterning Optical immersion lithograph...
For the next-generation immersion lithography technology, there is a growing interest in the immersi...
A study has been performed to determine the viability of phosphoric acid as a high-index fluid for i...
The search for successful generation 3 immersion lithography fluids is focused on high refractive in...
The need to extend 193nm immersion lithography necessitates the development of a third generation (G...
Generation-three (Gen-3) immersion lithography offers the promise of enabling the 32nm half-pitch no...
aIntel assignees to SEMATECH, bSEMATECH, and cMIT-LL For several years, SEMATECH has invested signi...
Generation-three (Gen-3) immersion lithography can be an enabler for the 32nm half-pitch node. For G...
Generation-three (Gen-3) immersion lithography can be an enabler for the 32nm half-pitch node. For G...
textThe semiconductor industry is continually challenged to maintain the trend identified in 1965 b...
textThe semiconductor industry is continually challenged to maintain the trend identified in 1965 b...
The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of...