Add to ORKGHigh-index immersion fluids enabling cost-effective single-exposure lithography for 32 nm half pitche
The need to extend 193nm immersion lithography necessitates the development of a third generation (G...
The proposed paper investigates the effects of ultra-pure water on DUV photoresist used in 193 nm im...
The search for successful generation 3 immersion lithography fluids is focused on high refractive in...
High-index immersion fluids enabling cost-effective single-exposure lithography for 32 nm half pitch...
We have performed high-index immersion fluid studies to define the levels of both soluble and insolu...
To identify the most practical and cost-effective technology after water immersion lithography (Gen1...
According to the ITRS roadmap, DRAM half pitch (hp) will reach to 32 and 20 nm in 2012 and 2017 resp...
According to the International Technology Roadmap for Semiconductors (ITRS), memory half pitch (hp) ...
For the next-generation immersion lithography technology, there is a growing interest in the immersi...
aIntel assignees to SEMATECH, bSEMATECH, and cMIT-LL For several years, SEMATECH has invested signi...
photoresist, pellicle, high-index fluid, phase shift, double patterning Optical immersion lithograph...
For several years, SEMATECH has invested significant effort into extending 193 nm immersion lithogra...
The lithography industry has been working to extend 193 nm immersion with double patterning and comp...
For most of the microelectronics industry history, optical lithography has been the backbone for con...
For most of the microelectronics industry history, optical lithography has been the backbone for con...
The need to extend 193nm immersion lithography necessitates the development of a third generation (G...
The proposed paper investigates the effects of ultra-pure water on DUV photoresist used in 193 nm im...
The search for successful generation 3 immersion lithography fluids is focused on high refractive in...
High-index immersion fluids enabling cost-effective single-exposure lithography for 32 nm half pitch...
We have performed high-index immersion fluid studies to define the levels of both soluble and insolu...
To identify the most practical and cost-effective technology after water immersion lithography (Gen1...
According to the ITRS roadmap, DRAM half pitch (hp) will reach to 32 and 20 nm in 2012 and 2017 resp...
According to the International Technology Roadmap for Semiconductors (ITRS), memory half pitch (hp) ...
For the next-generation immersion lithography technology, there is a growing interest in the immersi...
aIntel assignees to SEMATECH, bSEMATECH, and cMIT-LL For several years, SEMATECH has invested signi...
photoresist, pellicle, high-index fluid, phase shift, double patterning Optical immersion lithograph...
For several years, SEMATECH has invested significant effort into extending 193 nm immersion lithogra...
The lithography industry has been working to extend 193 nm immersion with double patterning and comp...
For most of the microelectronics industry history, optical lithography has been the backbone for con...
For most of the microelectronics industry history, optical lithography has been the backbone for con...
The need to extend 193nm immersion lithography necessitates the development of a third generation (G...
The proposed paper investigates the effects of ultra-pure water on DUV photoresist used in 193 nm im...
The search for successful generation 3 immersion lithography fluids is focused on high refractive in...