Modeling results of output static characteristics of gallium arsenide transistors for extreme high frequency range are given. Direct ion-implanted gallium arsenide transistors with the special profile under the gate are analyzed. Many particle Monte Carlo method with the solving of the Poisson equation are used for simulation of the three dimension structure with submicron length of the gate. Investigation of the gallium arsenide device provided the new results which connected with the influence of the geometrical size of the structure and features of gate construction to the output static characteristics. New modeling method of contact regions in device is presented for gallium arsenide transistors
The object of the work described in this thesis was to develop GaAs integrated circuit modeling tech...
A significant rise in the mass production of products that contain nanoparticles is of growing conce...
This paper describes a quasianalytical model for the calculation of the current-voltage characterist...
Includes bibliographical references (pages 44-49)In this project, an analytical modeling of Gallium ...
The progress of industry integrated circuits in recent years has been pushed by continuous miniaturi...
We present results for hydrodynamic simulations of pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mo...
138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.In this thesis, electronic tr...
This thesis is concerned with novel modeling approaches to three GaAs-based devices, namely: the he...
In the information science and technology such as computer science, telecommunications, processing o...
A Monte Carlo technique for the calculation of noise in unipolar GaAs semiconductor devices is devel...
Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been an...
International audienceThe sensitivity to heavy ions of three 45-nm multi-gate transistors is evaluat...
The use of graphene, which has high mobility of charge carriers, high thermal conductivity and a num...
By using a Monte Carlo simulator the static and dynamic characteristics of a 50 nm gate AlInAs/GaInA...
date of the first integrated circuit to 1971 which has seen the first microprocessor application, th...
The object of the work described in this thesis was to develop GaAs integrated circuit modeling tech...
A significant rise in the mass production of products that contain nanoparticles is of growing conce...
This paper describes a quasianalytical model for the calculation of the current-voltage characterist...
Includes bibliographical references (pages 44-49)In this project, an analytical modeling of Gallium ...
The progress of industry integrated circuits in recent years has been pushed by continuous miniaturi...
We present results for hydrodynamic simulations of pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mo...
138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.In this thesis, electronic tr...
This thesis is concerned with novel modeling approaches to three GaAs-based devices, namely: the he...
In the information science and technology such as computer science, telecommunications, processing o...
A Monte Carlo technique for the calculation of noise in unipolar GaAs semiconductor devices is devel...
Among the semiconductor in latitude use in microelectronics for digital circuits silicon has been an...
International audienceThe sensitivity to heavy ions of three 45-nm multi-gate transistors is evaluat...
The use of graphene, which has high mobility of charge carriers, high thermal conductivity and a num...
By using a Monte Carlo simulator the static and dynamic characteristics of a 50 nm gate AlInAs/GaInA...
date of the first integrated circuit to 1971 which has seen the first microprocessor application, th...
The object of the work described in this thesis was to develop GaAs integrated circuit modeling tech...
A significant rise in the mass production of products that contain nanoparticles is of growing conce...
This paper describes a quasianalytical model for the calculation of the current-voltage characterist...