Physics based analytical modeling of Gallium Arsenide MESFET for evaluation of junction capacitance with new modeling conception

Includes bibliographical references (pages 44-49)In this project, an analytical modeling of Gallium Arsenide MESFET has been reported. The model has been developed to obtain the drain current versus drain-source voltage for different gate-source voltages and the response of I-V characteristics has been determined from intrinsic parameters such as gate capacitances including both of the gate-source capacitances and gate-drain capacitances with respect to various gate-source voltages and gate drain-voltages with a new modeling conception. The new conception provides increased accuracy over a wide range of silicon and gallium arsenide devices for microwave circuit design applications. In order to understand the device performance the device parameters such as the drain current and the variation of gate-source capacitance and gate drain capacitance for gate-source and source-drain biasing were studied and the result is obtained by using the MATLAB software