A statistical summary of electrical characterization was performed on JAN diodes and transistors. Parameters are presented with test conditions, mean, standard deviation, lowest reading, 10% point, 90% point and highest reading
Data compiled for the purpose of evaluating the effect of power/temperature step stress when applied...
Data were compiled for the purpose of evaluating the effect of power/temperature step stress when ap...
The effect was studied of power/temperature step stress when applied to the PNP transistor JANTX2N26...
The data processing and calculation of statistical parameters was performed by the Tektronix compute...
A statistical summary of electrical characterization was performed on JANTX 1N5619 silicon diodes. P...
The necessary data to create a new class of specifications was the objective of this characterizatio...
The effect of power/temperature step stress when applied to the zener diode JANTX2N2989 manufactured...
The reliability of switching diode JANTX1N5614 was tested. The effect of power/temperature step stre...
Data compiled for the purpose of evaluating the effect of power/temperature step stress when applied...
The effect of power/temperature step stress when applied to the transistor JANTX2N2484, manufactured...
The effect was investigated of power/temperature step stress when applied to the zener diode JANTX1N...
The effect of power/temperature step stress when applied to the dual transistor JANTX2N2060 manufact...
The effect of power/temperature step stress when applied to a variety of semiconductor devices was e...
The effect was studied of power/temperature step stress when applied to the switching diode JANTX1N5...
Power/temperature step stress was applied to the Zener diode JANTX1N981B. Reliability of the device ...
Data compiled for the purpose of evaluating the effect of power/temperature step stress when applied...
Data were compiled for the purpose of evaluating the effect of power/temperature step stress when ap...
The effect was studied of power/temperature step stress when applied to the PNP transistor JANTX2N26...
The data processing and calculation of statistical parameters was performed by the Tektronix compute...
A statistical summary of electrical characterization was performed on JANTX 1N5619 silicon diodes. P...
The necessary data to create a new class of specifications was the objective of this characterizatio...
The effect of power/temperature step stress when applied to the zener diode JANTX2N2989 manufactured...
The reliability of switching diode JANTX1N5614 was tested. The effect of power/temperature step stre...
Data compiled for the purpose of evaluating the effect of power/temperature step stress when applied...
The effect of power/temperature step stress when applied to the transistor JANTX2N2484, manufactured...
The effect was investigated of power/temperature step stress when applied to the zener diode JANTX1N...
The effect of power/temperature step stress when applied to the dual transistor JANTX2N2060 manufact...
The effect of power/temperature step stress when applied to a variety of semiconductor devices was e...
The effect was studied of power/temperature step stress when applied to the switching diode JANTX1N5...
Power/temperature step stress was applied to the Zener diode JANTX1N981B. Reliability of the device ...
Data compiled for the purpose of evaluating the effect of power/temperature step stress when applied...
Data were compiled for the purpose of evaluating the effect of power/temperature step stress when ap...
The effect was studied of power/temperature step stress when applied to the PNP transistor JANTX2N26...