The data processing and calculation of statistical parameters was performed by the Tektronix computer system. The data acquired for easy vendor to vendor and date code to date code analysis are summarized. Each parameter is presented with test conditions, mean, standard deviation, lowest reading, 10% point (where 10% of all readings are equal to or less than the indicated reading), 90% point (where 90% of all readings are equal to or less than the indicated reading) and the highest reading
The effect of power/temperature step stress when applied to a variety of semiconductor devices was e...
The effect of power/temperature step stress was studied when applied to the Diode JANTX1N5619 manufa...
The effect was studied of power/temperature step stress when applied to the diode JANTX1N5622 manufa...
A statistical summary of electrical characterization was performed on JAN diodes and transistors. Pa...
A statistical summary of electrical characterization was performed on JANTX 1N5619 silicon diodes. P...
The effect was investigated of power/temperature step stress when applied to the zener diode JANTX1N...
The effect of power/temperature step stress when applied to the zener diode JANTX2N2989 manufactured...
The necessary data to create a new class of specifications was the objective of this characterizatio...
Power/temperature step stress was applied to the Zener diode JANTX1N981B. Reliability of the device ...
The reliability of switching diode JANTX1N5614 was tested. The effect of power/temperature step stre...
The effect of power/temperature step stress when applied to the transistor JANTX2N2484, manufactured...
The effect was studied of power/temperature step stress when applied to the switching diode JANTX1N5...
The effect of power/temperature step stress when applied to the dual transistor JANTX2N2060 manufact...
Data compiled for the purpose of evaluating the effect of power/temperature step stress when applied...
Data were compiled for the purpose of evaluating the effect of power/temperature step stress when ap...
The effect of power/temperature step stress when applied to a variety of semiconductor devices was e...
The effect of power/temperature step stress was studied when applied to the Diode JANTX1N5619 manufa...
The effect was studied of power/temperature step stress when applied to the diode JANTX1N5622 manufa...
A statistical summary of electrical characterization was performed on JAN diodes and transistors. Pa...
A statistical summary of electrical characterization was performed on JANTX 1N5619 silicon diodes. P...
The effect was investigated of power/temperature step stress when applied to the zener diode JANTX1N...
The effect of power/temperature step stress when applied to the zener diode JANTX2N2989 manufactured...
The necessary data to create a new class of specifications was the objective of this characterizatio...
Power/temperature step stress was applied to the Zener diode JANTX1N981B. Reliability of the device ...
The reliability of switching diode JANTX1N5614 was tested. The effect of power/temperature step stre...
The effect of power/temperature step stress when applied to the transistor JANTX2N2484, manufactured...
The effect was studied of power/temperature step stress when applied to the switching diode JANTX1N5...
The effect of power/temperature step stress when applied to the dual transistor JANTX2N2060 manufact...
Data compiled for the purpose of evaluating the effect of power/temperature step stress when applied...
Data were compiled for the purpose of evaluating the effect of power/temperature step stress when ap...
The effect of power/temperature step stress when applied to a variety of semiconductor devices was e...
The effect of power/temperature step stress was studied when applied to the Diode JANTX1N5619 manufa...
The effect was studied of power/temperature step stress when applied to the diode JANTX1N5622 manufa...