Investigation of structure of a real surface of polar faces of crystals of semiconductive compounds using asymptotic bregg diffraction

The investigation is concerned with crystals of GaAs, InAs, InSb, CdHgTe semiconductive compounds. The aim to be attained is to study the structure of a real surface of (III)A and (III)B polar faces of crystals of semiconductive compounds. It has been shown that a difference in the structure of the real surface of polar faces of crystals is determined by the density of free bonds and chemical activity of atoms on a surface. The physical parameters of the real surface structure have been defined. It has been shown that (III)A anodic treatment of faces of HnCdTe crystal lead to disordering of the atomic surface nearest to the filmAvailable from VNTIC / VNTIC - Scientific & Technical Information Centre of RussiaSIGLERURussian Federatio