Intelligente Leistungsmodule. Verbundprojekt 1991-1994 Abschlussbericht

The development of field-controlled power switches, especially insulated gate bipolar transistors, enables the integration of driving and guard circuits including the required sensoric components into the modules. On the basis of new integration, assembly and joint techniques demonstration prototypes of such intelligent power modules have been developed and tested. Research work was directed on high power integration and HSIC development, sensorics for the control of temperature and forward current, assembly and joint techniques with high resistance against alternating load and on hybrid techniques on the basis of ceramics with improved thermal conductivity. Project achievements include a high performance 30 V extended drain RESURF CMOS device for VLSI intelligent power application, a low temperature joining technique for reduced thermomechanical stress and a method for loss minimization in chopper circuits. (WEN)SIGLEAvailable from TIB Hannover: RO 3532(40) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman