Add to ORKGProperties of Fe-doped semi-insulating (SI) InP with different iron concentration are studied by using Hall effect, current-voltage (I-V), photoluminescence spectroscopy (PL) and photocurrent spectroscopy (PC) measurements. I-V characteristics of SI InP strongly depend on Fe doping concentration. Fe doping concentration also influences optical properties and defective formation in as-grown SI InP. Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PL and PC.link_to_subscribed_fulltex
As-cut InP wafers with residual carrier concentration < 5 x 10(15) cm(-3), submitted to Fe-diffusion...
Different Fe implantation schemes in n-doped InP have been used in order to create semi-insulating l...
It has recently been reported that high-resistivity Fe-doped InP wafers can present very different c...
Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by us...
Indium antisite defect In-P-related photoluminescence has been observed in Fe-diffused semi-insulati...
The electrical properties of Fe-doped semi-insulating (SI) InP were investigated before and after an...
In this paper, we analyze and compare electrical compensation and deep level defects in semi-insulat...
Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to st...
Semi-insulating (SI) InP materials have been prepared under different stoichiometric conditions, inc...
Semi-insulating (SI) InP obtained by iron phosphide ambient annealing has very low concentration of ...
The free electron concentration of as-grown liquid encapsulated Czochralski (LEC) InP measured by Ha...
Optical absorption and photoluminescence (PL) measurements were carried out in both undoped and Fe-d...
Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have b...
The free electron concentration of as-grown liquid encapsulated Czochralski (LEC) InP measured by Ha...
The measurement of photoconductivity in samples of semi-insulating n-type Fe-doped InP are reported....
As-cut InP wafers with residual carrier concentration < 5 x 10(15) cm(-3), submitted to Fe-diffusion...
Different Fe implantation schemes in n-doped InP have been used in order to create semi-insulating l...
It has recently been reported that high-resistivity Fe-doped InP wafers can present very different c...
Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by us...
Indium antisite defect In-P-related photoluminescence has been observed in Fe-diffused semi-insulati...
The electrical properties of Fe-doped semi-insulating (SI) InP were investigated before and after an...
In this paper, we analyze and compare electrical compensation and deep level defects in semi-insulat...
Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to st...
Semi-insulating (SI) InP materials have been prepared under different stoichiometric conditions, inc...
Semi-insulating (SI) InP obtained by iron phosphide ambient annealing has very low concentration of ...
The free electron concentration of as-grown liquid encapsulated Czochralski (LEC) InP measured by Ha...
Optical absorption and photoluminescence (PL) measurements were carried out in both undoped and Fe-d...
Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have b...
The free electron concentration of as-grown liquid encapsulated Czochralski (LEC) InP measured by Ha...
The measurement of photoconductivity in samples of semi-insulating n-type Fe-doped InP are reported....
As-cut InP wafers with residual carrier concentration < 5 x 10(15) cm(-3), submitted to Fe-diffusion...
Different Fe implantation schemes in n-doped InP have been used in order to create semi-insulating l...
It has recently been reported that high-resistivity Fe-doped InP wafers can present very different c...