Optical absorption and photoluminescence (PL) measurements were carried out in both undoped and Fe-doped samples and the eect of Fe doping on absorption and PL spectra were studied. The results show that Fe or Fe-related defects behave as non-radiative recombination centers in InP. This is very important from the point of view that the control of minority carrier lifetime is possible. On the other hand, comparative analysis of the PL results with the optical absorption data show that quantitative assessment of relative PL intensities is possible with respect to Fe concentrations
Different Fe implantation schemes in n-doped InP have been used in order to create semi-insulating l...
A photorefractive imaging technique, the principle of which is earlier described by Bylsma et al. [...
Fe is still the commonly used dopant to fabricate semi-insulating(SI) InP, a key material for high-s...
The measurement of photoconductivity in samples of semi-insulating n-type Fe-doped InP are reported....
Properties of Fe-doped semi-insulating (SI) InP with different iron concentration are studied by usi...
Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by us...
Indium antisite defect In-P-related photoluminescence has been observed in Fe-diffused semi-insulati...
Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to st...
Photo luminescence (PL) spectroscopy has been used to study InP annealed in phosphorus and iron phos...
This paper reports the use of the nuclear transmutation back doping technique for studying the deep ...
We report optical absorption measurements of Fe-doped GaAs, InP and GaP crystals obtained with the h...
Deep level defects in annealed InP have been studied by using photoluminescence spectroscopy (PL), t...
We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafer...
As-grown Fe-doped semi-insulating InP single crystal has been converted into n-type low-resistance m...
The anomalous diffusion of Fe implanted into InP has been studied by SIMS and TEM. From the close co...
Different Fe implantation schemes in n-doped InP have been used in order to create semi-insulating l...
A photorefractive imaging technique, the principle of which is earlier described by Bylsma et al. [...
Fe is still the commonly used dopant to fabricate semi-insulating(SI) InP, a key material for high-s...
The measurement of photoconductivity in samples of semi-insulating n-type Fe-doped InP are reported....
Properties of Fe-doped semi-insulating (SI) InP with different iron concentration are studied by usi...
Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by us...
Indium antisite defect In-P-related photoluminescence has been observed in Fe-diffused semi-insulati...
Photoluminescence (PL) and photo induced current transient spectroscopy (PICTS) have been used to st...
Photo luminescence (PL) spectroscopy has been used to study InP annealed in phosphorus and iron phos...
This paper reports the use of the nuclear transmutation back doping technique for studying the deep ...
We report optical absorption measurements of Fe-doped GaAs, InP and GaP crystals obtained with the h...
Deep level defects in annealed InP have been studied by using photoluminescence spectroscopy (PL), t...
We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafer...
As-grown Fe-doped semi-insulating InP single crystal has been converted into n-type low-resistance m...
The anomalous diffusion of Fe implanted into InP has been studied by SIMS and TEM. From the close co...
Different Fe implantation schemes in n-doped InP have been used in order to create semi-insulating l...
A photorefractive imaging technique, the principle of which is earlier described by Bylsma et al. [...
Fe is still the commonly used dopant to fabricate semi-insulating(SI) InP, a key material for high-s...