Add to ORKGLow defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (\u3e1800 cm2/V s) and sheet charge density (\u3e3×1013 cm−2), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire and SiC, resulting in sheet resistivity values down to ∼ 100 Ω/◻ at room temperature. Fabricated 1.2 μm gate devices showed excellent current-voltage characteristics, including a zero gate saturation current density of ∼ 1.3 A/mm and a peak transconductance of ∼ 260 mS/mm. Here, an all MBE growth of optimized AlN/GaN HEMT structures plus the results of thin-film characterizations and device measurements are presented
Group–III nitride semiconductors are viewed as the next-gen materials due to the high potential in o...
We present a systematic study of epitaxial growth, processing technology, device performance and rel...
Binary AlN/GaN high electron mobility transistors (HEMTs) were grown by plasma-assisted molecular be...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
AlN/GaN high electron mobility transistor (HEMT) structures with a 3.5 nm AlN barrier were grown wit...
AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecul...
GaN-based high-electron-mobility transistors (HEMTs) will play an important role in the next generat...
Ammonia-MBE growth techniques were developed to allow the production of AlGaN and GaN layers suitabl...
Abstract—High-electron mobility transistors (HEMTs) based on ultrathin AlN/GaN heterostructures with...
Gallium nitride based High Electron Mobility Transistors (HEMT) with ultra-thin AlN barriers are dev...
AlGaN/GaN high electron mobility transistors(HEMTs) with high performance were fabricated and charac...
AlN/GaN HEMTs offer a number of performance improvements over traditional AlGaN/GaN structures. In t...
Group–III nitride semiconductors are viewed as the next-gen materials due to the high potential in o...
Group–III nitride semiconductors are viewed as the next-gen materials due to the high potential in o...
We present a systematic study of epitaxial growth, processing technology, device performance and rel...
Binary AlN/GaN high electron mobility transistors (HEMTs) were grown by plasma-assisted molecular be...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
AlN/GaN high electron mobility transistor (HEMT) structures with a 3.5 nm AlN barrier were grown wit...
AlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecul...
GaN-based high-electron-mobility transistors (HEMTs) will play an important role in the next generat...
Ammonia-MBE growth techniques were developed to allow the production of AlGaN and GaN layers suitabl...
Abstract—High-electron mobility transistors (HEMTs) based on ultrathin AlN/GaN heterostructures with...
Gallium nitride based High Electron Mobility Transistors (HEMT) with ultra-thin AlN barriers are dev...
AlGaN/GaN high electron mobility transistors(HEMTs) with high performance were fabricated and charac...
AlN/GaN HEMTs offer a number of performance improvements over traditional AlGaN/GaN structures. In t...
Group–III nitride semiconductors are viewed as the next-gen materials due to the high potential in o...
Group–III nitride semiconductors are viewed as the next-gen materials due to the high potential in o...
We present a systematic study of epitaxial growth, processing technology, device performance and rel...
Binary AlN/GaN high electron mobility transistors (HEMTs) were grown by plasma-assisted molecular be...