Add to ORKGAlGaN/GaN high electron mobility transistor (HEMT) materials are grown by RF plasma-assisted molecular beam epitaxy (RF-MBE) and HEMT devices are fabricated and characterized. The HEMT materials have a mobility of 1035cm~2/(V ? s) at sheet electron concentration of 1.0 * 10~(13)cm~(-2) at room temperature. For the de-vices fabricated using the malt-rials,a maximum saturation drain-current density of 925mA/mm and a peak extrinsic iransecmductance of IHfimS/mm are obtained on devices with gate length and width of l/-im and 80/im respectively. The f_t, unit-current-gain frequency of the devices,is about 18. 8GHz
AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrat...
AlGaN/GaN high electron mobility transistors(HEMTs) with high performance were fabricated and charac...
We present radio-frequency (RF) power results of GaN-based high electron mobility transistors (HEMTs...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
We report on the plasma-assisted molecular beam epitaxy (PAMBE) of AlGaN/GaN high electron mobility ...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
Group–III nitride semiconductors are viewed as the next-gen materials due to the high potential in o...
Group–III nitride semiconductors are viewed as the next-gen materials due to the high potential in o...
We report on the fabrication and high-frequency characterization of AlGaN/GaN high-electron mobility...
Ammonia-MBE growth techniques were developed to allow the production of AlGaN and GaN layers suitabl...
We report AlGaN-GaN high electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE)...
Heterostructures of the materials system GaN/AlGaN/GaN were grown by molecular beam epitaxy on 6H-Si...
Heterostructures of the materials system GaN/AlGaN/GaN were grown by molecular beam epitaxy on 6H-Si...
Heterostructures of the materials system GaN/AlGaN/GaN were grown by molecular beam epitaxy on 6H-Si...
AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrat...
AlGaN/GaN high electron mobility transistors(HEMTs) with high performance were fabricated and charac...
We present radio-frequency (RF) power results of GaN-based high electron mobility transistors (HEMTs...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
We report on the plasma-assisted molecular beam epitaxy (PAMBE) of AlGaN/GaN high electron mobility ...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
Group–III nitride semiconductors are viewed as the next-gen materials due to the high potential in o...
Group–III nitride semiconductors are viewed as the next-gen materials due to the high potential in o...
We report on the fabrication and high-frequency characterization of AlGaN/GaN high-electron mobility...
Ammonia-MBE growth techniques were developed to allow the production of AlGaN and GaN layers suitabl...
We report AlGaN-GaN high electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE)...
Heterostructures of the materials system GaN/AlGaN/GaN were grown by molecular beam epitaxy on 6H-Si...
Heterostructures of the materials system GaN/AlGaN/GaN were grown by molecular beam epitaxy on 6H-Si...
Heterostructures of the materials system GaN/AlGaN/GaN were grown by molecular beam epitaxy on 6H-Si...
AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrat...
AlGaN/GaN high electron mobility transistors(HEMTs) with high performance were fabricated and charac...
We present radio-frequency (RF) power results of GaN-based high electron mobility transistors (HEMTs...