Add to ORKGAbstract-Bias Temperature Instability (BTI) becomes one of the most important reliability issues for nanometer process devices. We focus on aging degradation by BTI because it is known as one of the dominant factor that determines life time of circuits. In this paper, we show circuit delay degradation characteristic of BTI using the circuit simulation. The delay increase 15% after 10 years stress
Abstract—As semiconductor manufacturing has entered into the nanoscale era, Bias Temperature Instabi...
Abstract-With integrated circnits scale into the nano-scale era, aging effect becomes one of the mos...
Negative bias temperature instability (NBTI) prediction relies on a reliable extraction of power exp...
A methodology to quantify the degradation at circuit level due to negative bias temperature instabil...
As the CMOS technology scales down towards nanoscale dimensions, there are increasing transistor rel...
Technology scaling along with the process developments has resulted in performance improvement of th...
With technology scaling, the susceptibility of circuits to different reliability degradations is ste...
As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliab...
As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliab...
Negative-bias-temperature-instability (NBTI) has become the primary limiting factor of circuit lifet...
As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliab...
As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliab...
As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliab...
As technology further scales semiconductor devices, aging-induced device degradation has become one ...
The negative bias temperature instability (NBTI) of p-MOSFET has the greatest impact on the long ter...
Abstract—As semiconductor manufacturing has entered into the nanoscale era, Bias Temperature Instabi...
Abstract-With integrated circnits scale into the nano-scale era, aging effect becomes one of the mos...
Negative bias temperature instability (NBTI) prediction relies on a reliable extraction of power exp...
A methodology to quantify the degradation at circuit level due to negative bias temperature instabil...
As the CMOS technology scales down towards nanoscale dimensions, there are increasing transistor rel...
Technology scaling along with the process developments has resulted in performance improvement of th...
With technology scaling, the susceptibility of circuits to different reliability degradations is ste...
As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliab...
As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliab...
Negative-bias-temperature-instability (NBTI) has become the primary limiting factor of circuit lifet...
As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliab...
As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliab...
As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliab...
As technology further scales semiconductor devices, aging-induced device degradation has become one ...
The negative bias temperature instability (NBTI) of p-MOSFET has the greatest impact on the long ter...
Abstract—As semiconductor manufacturing has entered into the nanoscale era, Bias Temperature Instabi...
Abstract-With integrated circnits scale into the nano-scale era, aging effect becomes one of the mos...
Negative bias temperature instability (NBTI) prediction relies on a reliable extraction of power exp...