With technology scaling, the susceptibility of circuits to different reliability degradations is steadily increasing. Aging in transistors due to bias temperature instability (BTI) and voltage fluctuation in the power delivery network of circuits due to IR-drops are the most prominent. In this paper, we are reporting for the first time that there are interdependences between voltage fluctuation and BTI aging that are nonnegligible. Modeling and investigating the joint impact of voltage fluctuation and BTI aging on the delay of circuits, while remaining compatible with the existing standard design flow, is indispensable in order to answer the vital question, “what is an efficient (i.e., small, yet sufficient) timing guardband to sustain the ...
In this brief, we show that bias temperature instability (BTI) aging of MOS transistors, together wi...
University of Minnesota Ph.D. dissertation. January 2014. Major: Electrical Engineering. Advisor: Ch...
In this brief, we show that bias temperature instability (BTI) aging of MOS transistors, together wi...
Abstract-Bias Temperature Instability (BTI) becomes one of the most important reliability issues for...
Complementary Metallic Oxide Semiconductor (CMOS) technology scaling enhances the performance, trans...
Complementary Metallic Oxide Semiconductor (CMOS) technology scaling enhances the performance, trans...
Aging degradation dominated by bias temperature instability (BTI) effect is one of the important c...
abstract: Negative bias temperature instability (NBTI) is a leading aging mechanism in modern digita...
Abstract—Transistor aging due to bias temperature instability (BTI) is a major reliability concern i...
Defects, both as-fabricated and generated during operation, are an inevitable reality of real-world ...
This is an Open Access article made available under the terms of the Creative Commons Attribution 3....
Technology scaling along with the process developments has resulted in performance improvement of th...
Current and future semiconductor technology nodes, bring about a variety of challenges that pertain ...
Bias temperature instability (BTI) is recognised as the primary parametric failure mechanism in nano...
In this paper, we address the issue of analyzing the effects of aging mechanisms on ICs' soft error ...
In this brief, we show that bias temperature instability (BTI) aging of MOS transistors, together wi...
University of Minnesota Ph.D. dissertation. January 2014. Major: Electrical Engineering. Advisor: Ch...
In this brief, we show that bias temperature instability (BTI) aging of MOS transistors, together wi...
Abstract-Bias Temperature Instability (BTI) becomes one of the most important reliability issues for...
Complementary Metallic Oxide Semiconductor (CMOS) technology scaling enhances the performance, trans...
Complementary Metallic Oxide Semiconductor (CMOS) technology scaling enhances the performance, trans...
Aging degradation dominated by bias temperature instability (BTI) effect is one of the important c...
abstract: Negative bias temperature instability (NBTI) is a leading aging mechanism in modern digita...
Abstract—Transistor aging due to bias temperature instability (BTI) is a major reliability concern i...
Defects, both as-fabricated and generated during operation, are an inevitable reality of real-world ...
This is an Open Access article made available under the terms of the Creative Commons Attribution 3....
Technology scaling along with the process developments has resulted in performance improvement of th...
Current and future semiconductor technology nodes, bring about a variety of challenges that pertain ...
Bias temperature instability (BTI) is recognised as the primary parametric failure mechanism in nano...
In this paper, we address the issue of analyzing the effects of aging mechanisms on ICs' soft error ...
In this brief, we show that bias temperature instability (BTI) aging of MOS transistors, together wi...
University of Minnesota Ph.D. dissertation. January 2014. Major: Electrical Engineering. Advisor: Ch...
In this brief, we show that bias temperature instability (BTI) aging of MOS transistors, together wi...