HIGH TRANSMITTANCE ATTENUATED PHASE SHIFT MASK FOR AN OPTICAL LITHOGRAPHY

[[abstract]]本發明係有關於一種光學微影用之高穿透衰減式相位偏移光罩(三)，其係在π相位偏移的條件下，於(ZrO2 )x －(Al2 O3 )1 － x 複合膜中夾入氧化鈦【TiO2 】薄膜層，藉以獲得超晶格膜層被應用於高穿透衰減式相位光罩之最佳成份組合範圍。在π相位偏移的條件下，高穿透衰減式相位光罩的最佳膜層為具有最低的穿透率(可得最佳觀察檢測)及最低的反射率(可得最佳影像)且其比超晶格膜層容易製作。為了獲得如此高穿透衰減式相位光罩的最佳膜層，(ZrO2 )x －(Al2 O3 )1 － x 複合材料中夾入TiO2 層被模擬。且如此高穿透衰減式相位光罩的最佳膜層的最佳製程被模擬獲得；如於(ZrO2 )0 . 1 8 7 －(Al2 O3 )0 . 8 1 3 複合材料中夾入雙層的TiO2 層被製作出來，其光學特性為於193奈米波長時19.8%穿透率、9.1%反射率、181.58度相位及於257奈米波長時18.9%穿透率；此膜層可被使用當做高穿透衰減式相位光罩的最佳膜層。[[abstract]]The present invention relates to a high transmittance attenuated phase shift mask for an optical lithography. Under the conditions of π phase shift, (ZrO2 )x －(Al2 O3 )1 － x composite films can be inserted TiO2 thin layers to proceed with optical adjustable simulation of constant characteristics to obtain an optimized extent of compositions that superlattice films can be applied for the high transmittance attenuated phase shift mask. Further speaking, the optimized film for the high transmittance attenuated phase shift mask is provided with a lowest transmittance for obtaining of an optimized detection of observation and a lowest reflectance for obtaining of an optimized image, the manufacture of which is easier than supperlattice films. Still, (ZrO2 )x －(Al2 O3 )1 － x composite material can be inserted TiO2 thin layers, and simulated to obtain the optimized process for the optimized film of the high transmittance attenuated phase shift mask so as to manufacture the (ZrO2 )x －(Al2 O3 )1 － X composite with two thin inserted TiO2 layers, which shows a transmittance of 19.8 %, a reflectance of 9.1% and a phase of 181.58 degree at a wavelength of 193nm, and a transmittance of 18.9% at a wavelength of 257nm. As a result, this film can be served as the optimized one for the high transmittance attenuated phase shift mask