[[abstract]]The present invention discloses a HT-AttPSM (high-transmittance attenuated phase-shift mask) blank with phase-shifters composed of the (Al2O3)x/(TiO2)1-x superlattice film stacks, wherein x preferably ranges 79?84%. Particularly, the four-stacked superlattice films of the present invention perform superior optical properties including transmittance of 19.9% and a reflectance of 3.2% at the wavelength of 193 nm and an inspection transmittance less than 20% at the wavelength of 257 nm
[[abstract]]CrO/ZrO optical superlattices composed of ten film stacks with ∼9 nm thickness in each s...
TiSixNy and TiSixOyN z were presented as new embedded materials for APSM in 193 nm lithography. TiSi...
The mask industry has recently witnessed an increasing number of new MoSi mask blank materials which...
[[abstract]]本發明係為一種光學微影用之高穿透衰減式相位偏移光罩(一),其主要係可調諧光學常數的新式單層(Al2O3)x-(TiO2)1-x[氧化鋁-二氧化鈦]複合膜在193nm波段下可被用...
[[abstract]]An attenuated Phase Shift Mask (PSM) blank and an attenuated Phase Shift Mask (PSM), and...
To acquire the required resolution for 248- and 193-nm lithography, a study of attenuated phase-shif...
[[abstract]]本發明係有關於一種光學微影用之高穿透衰減式相位偏移光罩(三),其係在π相位偏移的條件下,於(ZrO2 )x -(Al2 O3 )1 - x 複合膜中夾入氧化鈦【TiO2 】薄膜...
The electronic revolution is driven by the circuits and devices fabricated on silicon. Since the inv...
[[abstract]]©2004 AVS - Phase-shifting masks are a vital resolution enhance technique that will be u...
[[abstract]]An attenuating phase shifting photomask is formed using attenuating phase shifting compo...
We have developed a new attenuating embedded phase-shift mask blank for 193 nm lithography based on ...
[[abstract]]An attenuating phase shifting photomask is formed using attenuating phase shifting compo...
Optimization of the absorber stack is becoming a critical issue in extreme ultraviolet (EUV) lithogr...
As the microelectronics industry trends toward 157nm lithography and device geometries shrink below ...
An artificial transmission line based on Barium-Strontium-Titanate (BST) thick-film is used as a pha...
[[abstract]]CrO/ZrO optical superlattices composed of ten film stacks with ∼9 nm thickness in each s...
TiSixNy and TiSixOyN z were presented as new embedded materials for APSM in 193 nm lithography. TiSi...
The mask industry has recently witnessed an increasing number of new MoSi mask blank materials which...
[[abstract]]本發明係為一種光學微影用之高穿透衰減式相位偏移光罩(一),其主要係可調諧光學常數的新式單層(Al2O3)x-(TiO2)1-x[氧化鋁-二氧化鈦]複合膜在193nm波段下可被用...
[[abstract]]An attenuated Phase Shift Mask (PSM) blank and an attenuated Phase Shift Mask (PSM), and...
To acquire the required resolution for 248- and 193-nm lithography, a study of attenuated phase-shif...
[[abstract]]本發明係有關於一種光學微影用之高穿透衰減式相位偏移光罩(三),其係在π相位偏移的條件下,於(ZrO2 )x -(Al2 O3 )1 - x 複合膜中夾入氧化鈦【TiO2 】薄膜...
The electronic revolution is driven by the circuits and devices fabricated on silicon. Since the inv...
[[abstract]]©2004 AVS - Phase-shifting masks are a vital resolution enhance technique that will be u...
[[abstract]]An attenuating phase shifting photomask is formed using attenuating phase shifting compo...
We have developed a new attenuating embedded phase-shift mask blank for 193 nm lithography based on ...
[[abstract]]An attenuating phase shifting photomask is formed using attenuating phase shifting compo...
Optimization of the absorber stack is becoming a critical issue in extreme ultraviolet (EUV) lithogr...
As the microelectronics industry trends toward 157nm lithography and device geometries shrink below ...
An artificial transmission line based on Barium-Strontium-Titanate (BST) thick-film is used as a pha...
[[abstract]]CrO/ZrO optical superlattices composed of ten film stacks with ∼9 nm thickness in each s...
TiSixNy and TiSixOyN z were presented as new embedded materials for APSM in 193 nm lithography. TiSi...
The mask industry has recently witnessed an increasing number of new MoSi mask blank materials which...