Growth of single-crystal indium nitride nanotubes and nanowires by a controlled-carbonitridation reaction route

The synthesis of single-crystalline InN nanotubes and nanowires by using a controlled-carbonitridation thermochemical route was investigated. The InN nanotubes were formed by a diffusion-limited process at higher temperature and solid InN nanowires were formed by a kinetically limited process at low temperatures. The photoluminescence (PL) spectrum of the InN nanotubes showed a strong and broad emission peak at 640 nm. It was found that the high-purity InN nanotubes were used for the growing demand in nanoscale science and technology for group III semiconductors.