Indium-assisted synthesis on GaN nanotubes

The synthesis of gallium nitride (GaN) nanotubes in a high yield by a simple indium-assisted thermal evaporation method in the presence of HN 3 gas flowing was discussed. A vapor-liquid-solid process for the formation of the GaN nanotubes was also proposed. It was observed that the synthesized GaN nanotubes were amorphous and partially filled with indium, several micrometers in length, 40-50 nm in outer diameter and 7 nm for tube wall thickness. It was shown that the photoluminescence spectrum at room temperature exhibits a great shift from the band gap of 3.40 eV of bulk GaN to high energy of 3.63 eV.