Nowadays the development of the image formation in scanning electron microscope (SEM) is oriented to the use of scanning electron microscopes with low accelerating voltage of the primary beam (LV SEM). Secondary electrons (SEs) for topographical contrast observation and backscattered electrons (BSEs) for material contrast observation are the main components of the detected signal in LV SEM. While the secondary electrons can be detected either by Everhart-Thornley scintillation detector or by the "in lens" SE detector, the detection of backscattered electrons (BSEs) in LV SEM is an unsolved problem ye
This work contains description of basic properties and principles of electron microscopy focused on ...
Origins of topographic contrast in the scanning electron microscope (SEM) are different at different...
This work is focused on investigating of influence of different working conditions in scanning elect...
This paper deals with the detection of signal electrons in the SEM at primary beam energies of 3 keV...
This paper deals with the problems of backscattered electrons (BSE) detection in low voltage scannin...
Specimen observation at a low accelerating voltage of the electron beam (around 1kV) is a new and at...
The work focuses especially on research of a detector for conjoint as well as separated detection of...
Electron detectors used for imaging in the scanning electron microscope include those which detect s...
The collection of secondary electrons (SE) was studied for microscopes where the magnetic field pene...
The paper deals with the detection of secondary electrons in SEM by means of Everhart-Thornley type ...
In the scanning electron microscope (SEM), the secondary electrons (SE) are usually detected by the ...
Due to the influence of refraction effects on the escape probability of the Back-Scattered Electrons...
Article deals with the high resolution imaging by means of backscattered electrons (BSE) in the scan...
The development of advanced materials is inseparably connected with detailed knowledge of the relati...
Current methodology of imaging in the scanning electron microscopy is based on the detection of sign...
This work contains description of basic properties and principles of electron microscopy focused on ...
Origins of topographic contrast in the scanning electron microscope (SEM) are different at different...
This work is focused on investigating of influence of different working conditions in scanning elect...
This paper deals with the detection of signal electrons in the SEM at primary beam energies of 3 keV...
This paper deals with the problems of backscattered electrons (BSE) detection in low voltage scannin...
Specimen observation at a low accelerating voltage of the electron beam (around 1kV) is a new and at...
The work focuses especially on research of a detector for conjoint as well as separated detection of...
Electron detectors used for imaging in the scanning electron microscope include those which detect s...
The collection of secondary electrons (SE) was studied for microscopes where the magnetic field pene...
The paper deals with the detection of secondary electrons in SEM by means of Everhart-Thornley type ...
In the scanning electron microscope (SEM), the secondary electrons (SE) are usually detected by the ...
Due to the influence of refraction effects on the escape probability of the Back-Scattered Electrons...
Article deals with the high resolution imaging by means of backscattered electrons (BSE) in the scan...
The development of advanced materials is inseparably connected with detailed knowledge of the relati...
Current methodology of imaging in the scanning electron microscopy is based on the detection of sign...
This work contains description of basic properties and principles of electron microscopy focused on ...
Origins of topographic contrast in the scanning electron microscope (SEM) are different at different...
This work is focused on investigating of influence of different working conditions in scanning elect...