Current methodology of imaging in the scanning electron microscopy is based on the detection of signal electrons that carry topografic and materialcontrast of specimens under study. Electronic devices can be observed because in their standard working mode voltage differences on component surfaces are visualized by means of the voltage contrast. This contrast can be acquired in nearly any commercially available scanning electron microscopeby detection and subsequent analysis of secondary electrons
AbstractThe SEM technique known as Voltage Contrast has a history going back more than 50 years. The...
This work contains description of basic properties and principles of electron microscopy focused on ...
Secondary electron (SE) image contrast from p-type silicon has been studied using field-emission sca...
This work contains theoretical description of basic features and principles of electron microscopy, ...
This work contains theoretical description of basic features and principles of electron microscopy, ...
This paper deals with possibility of use voltage contrast in environmental scanning electron microsc...
This thesis deals with scanning electron microscope working at higher pressure in the specimen chamb...
This work deal with problems of investigation materials electron beam. This project is focuses on in...
This poster shows exemples for secondary electron SE-imaging contrast due to partial electrical char...
This paper deals with the study of the contrast mechanisms of the nonconductive and wet samples in e...
When interpreting the image contrasts we have to consider all instrument parameters that influence t...
First part of this thesis is a theoretical essay which deals with the basics of scanning electron mi...
The charging effects are encountered very often when the semiconductor specimens are observed. There...
This work contains theory about scanning electron microscopy. It describes construction, principle o...
The scanning electron microscope (SEM) can be used to study and characterize a wide variety of mater...
AbstractThe SEM technique known as Voltage Contrast has a history going back more than 50 years. The...
This work contains description of basic properties and principles of electron microscopy focused on ...
Secondary electron (SE) image contrast from p-type silicon has been studied using field-emission sca...
This work contains theoretical description of basic features and principles of electron microscopy, ...
This work contains theoretical description of basic features and principles of electron microscopy, ...
This paper deals with possibility of use voltage contrast in environmental scanning electron microsc...
This thesis deals with scanning electron microscope working at higher pressure in the specimen chamb...
This work deal with problems of investigation materials electron beam. This project is focuses on in...
This poster shows exemples for secondary electron SE-imaging contrast due to partial electrical char...
This paper deals with the study of the contrast mechanisms of the nonconductive and wet samples in e...
When interpreting the image contrasts we have to consider all instrument parameters that influence t...
First part of this thesis is a theoretical essay which deals with the basics of scanning electron mi...
The charging effects are encountered very often when the semiconductor specimens are observed. There...
This work contains theory about scanning electron microscopy. It describes construction, principle o...
The scanning electron microscope (SEM) can be used to study and characterize a wide variety of mater...
AbstractThe SEM technique known as Voltage Contrast has a history going back more than 50 years. The...
This work contains description of basic properties and principles of electron microscopy focused on ...
Secondary electron (SE) image contrast from p-type silicon has been studied using field-emission sca...