On n+-GaAS substrates, gold-germanium eutectic films with a nickel overlayer, silver-germanium eutectic films with a nickel overlayer and aluminum-germanium films were evaporated. Samples from each of these three types of contacts were furnace and laser annealed with a pulsed excimer laser for optimum results. Gold-germanium and silver-germanium films gave ohmic contacts under both types of annealing. The laser annealed gold based contacts had a better surface morphology and somewhat smaller resistance than its furnace annealed counterpart. In case of silver based contacts, it was the furnace annealed contacts that had a lower resistance and better morphology. In case of aluminum based contacts, furnace annealing did not give an ohmic conta...
The Au/(InGe) contact to GaAs was investigated to discover the metallurgical structure of the contac...
Contact structures using contact materials Au, Ge and Pd on n-type GaAs were metallized, formed and ...
Recent advances in the technology and understanding of ohmic contacts to GaAs are presented. The pap...
The results of a study of laser-annealed Au-Ge ohmic contacts to GaAs are presented. The specific co...
Good quality ohmic contacts to GaAs microwave devices are of vital importance for the efficient oper...
In this paper, state-of-the-art laser thermal annealing is used to form germanide contacts on n-dope...
The thermal stability of W/Pt /doping element /Pd and Pt /doping element /Pd ohmic contacts with Ge,...
The contribution deals with the performance of doping element/Pd/In contact structures on n + -GaAs ...
Abstract – The comparative analysis of parameters of ohmic contacts to n-i-GaAs deposited by the the...
Ohmic contacts obtained by deposition of (AuGeNi + AuNi) films on n-GaAs substrates were studied. Th...
The al loying of gal l ium arsenide with thin films of pure gold and the gold 12 % germanium-s i lve...
Le recuit local de contacts de petite dimension sur une couche de Si et GaAs a été réalisé à l'aide ...
© 2013 Elsevier B.V. All rights reserved. Ohmic contacts to n-type germanium have been fabricated an...
A new method of depositing refractory metal silicide films was developed for both Schottky barriers ...
Ohmic contacts of AuGe have been produced on GaAs epilayers by laser alloying. The contacts possess ...
The Au/(InGe) contact to GaAs was investigated to discover the metallurgical structure of the contac...
Contact structures using contact materials Au, Ge and Pd on n-type GaAs were metallized, formed and ...
Recent advances in the technology and understanding of ohmic contacts to GaAs are presented. The pap...
The results of a study of laser-annealed Au-Ge ohmic contacts to GaAs are presented. The specific co...
Good quality ohmic contacts to GaAs microwave devices are of vital importance for the efficient oper...
In this paper, state-of-the-art laser thermal annealing is used to form germanide contacts on n-dope...
The thermal stability of W/Pt /doping element /Pd and Pt /doping element /Pd ohmic contacts with Ge,...
The contribution deals with the performance of doping element/Pd/In contact structures on n + -GaAs ...
Abstract – The comparative analysis of parameters of ohmic contacts to n-i-GaAs deposited by the the...
Ohmic contacts obtained by deposition of (AuGeNi + AuNi) films on n-GaAs substrates were studied. Th...
The al loying of gal l ium arsenide with thin films of pure gold and the gold 12 % germanium-s i lve...
Le recuit local de contacts de petite dimension sur une couche de Si et GaAs a été réalisé à l'aide ...
© 2013 Elsevier B.V. All rights reserved. Ohmic contacts to n-type germanium have been fabricated an...
A new method of depositing refractory metal silicide films was developed for both Schottky barriers ...
Ohmic contacts of AuGe have been produced on GaAs epilayers by laser alloying. The contacts possess ...
The Au/(InGe) contact to GaAs was investigated to discover the metallurgical structure of the contac...
Contact structures using contact materials Au, Ge and Pd on n-type GaAs were metallized, formed and ...
Recent advances in the technology and understanding of ohmic contacts to GaAs are presented. The pap...