Investigation of AuGeNi Ohmic Contact to n-i-GaAs Deposited by Different Methods

Abstract – The comparative analysis of parameters of ohmic contacts to n-i-GaAs deposited by the thermal evaporation of Au–Ge–Ni alloy or layer by layer deposition of Ge, Au, and Ni films is carried out. That has been shown the values of the specific contact resistance of the layer by layer deposited ohmic contacts are more reproducible and the sur-face morphology of this contacts is smoother than in the case of contacts deposited by the Au–Ge–Ni alloy evaporation. 1