143 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.Properties of l/f noise (low frequency resistance fluctuations) are analyzed using the results of a number of experiments, several of which are unique to our laboratory. Measurements of thermally activated noise spectral features, as well as the effect of a surface potential of the noise kinetics in GaAs. A study of the statistical properties of l/f noise is presented, concentrating on small (('(TURN))1(mu)m('2) surface area) semiconductor samples that produce three distinct types of non-Gaussian noise. Models for l/f noise in Si and GaAs are developed in light of these results.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD