1/f Noise sources

This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an a value with a magnitude in the order of 10-4. Damaging the crystal has a strong influence on a, a may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The a values of several semiconductors are given. These values can be used in calculations of 1/f noise in device