Extraction of microwave FET noise parameters using frequency-dependent equivalent noise temperatures

A method for determining the noise parameters of high frequency field-effect transistors is presented. It has been developed by expressing the chain correlation matrix of the device as a function of its H-parameters and two frequency-dependent equivalent noise temperatures. The noise temperatures are determined utilizing the H-parameters and the 50 Omega noise figure of the device measured at a number of frequency points. The extraction of the small-signal equivalent circuit model of the device is therefore not required. A good agreement with the results of a well-established method is demonstrated in a wide range of frequencies