In this paper a novel approach for determining the four noise parameters of FET devices over frequency is presented. Such methodology is made of two parts: the first one allows to straightforwardly extract single-frequency noise parameters from source-pull data; the second one extends this capability to multi-frequency, source-pull data to obtain a full description of device noise behavior over frequency by means of at most 10 constant parameters (depending on the required accuracy). The whole process is automated via a software routine and does not need a previous knowledge of the FET equivalent circuit's topology, or the values of its elements. This peculiarity makes the proposed method very well suited to quick characterization campaigns...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
A method for determining the noise parameters of high frequency field-effect transistors is presente...
A method for determining the noise parameters of high frequency field-effect transistors is presente...
A method for determining the noise parameters of high frequency field-effect transistors is presente...
A method for determining the noise parameters of high frequency field-effect transistors is presente...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining the four noise parameters of FET devices over frequen...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
In this paper a novel approach for determining device noise parameters over frequency is presented. ...
A method for determining the noise parameters of high frequency field-effect transistors is presente...
A method for determining the noise parameters of high frequency field-effect transistors is presente...
A method for determining the noise parameters of high frequency field-effect transistors is presente...
A method for determining the noise parameters of high frequency field-effect transistors is presente...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...
A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based...