Study of the influence of the dielectric composition of Al/Ti/ZrO2:Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications

The memory behavior of Al/Ti/ZrO2:Al2O3/TiN/Si/Al devices is investigated in this work. They are adequate to be used as resistive switching memories, with two clearly different states. Besides, intermediate states are also accessible in a controllable manner. The electrical characterization in terms of admittance parameters provides relevant complementary information. The cation ratio influences the memory maps and can be changed to obtain specifically sized shape of the maps. © The Electrochemical Society.Peer reviewe