Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained from a movie of GaAs droplet epitaxy. Cylindrical symmetry of structures grown by droplet epitaxy is assumed in the simulations which reproduce the main features of the experimental MEM image contrast, demonstrating that droplet epitaxy can be studied in real-time. It is therefore confirmed that an inner ring forms at the droplet contact line and an outer ring (or skirt) occurs outside the droplet periphery. We believe that MEM combined with image simulations will be increasingly used to study the formation and growth of quantum structures.</p
For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincb...
due to their special mechanical, electrical and optical behavior. The correlation between these extr...
Crystal damage induced by irradiation is investigated using transmission electron microscopy (TEM) c...
Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained f...
A full, three{dimensional (3D) ray tracing approach is developed to simulate the caustics visible i...
Droplet epitaxy of GaAs is studied in real time using in situ surface electron microscopy. The resul...
Droplet epitaxy is a recently developed variant of molecular beam epitaxy (MBE) which is used to for...
We discuss a new interpretation of mirror electron microscopy (MEM) images, whereby electric field d...
We discuss an intuitive approach to interpreting mirror electron microscopy (MEM) images, whereby im...
We develop several approaches to understand and interpret image contrast in mirror electron microsco...
High resolution electron microscopy is now often used to determine the structure of nano‐materials: ...
GaAs based communication and optoelectronic devices are widely used in our daily lives. Applications...
A new algorithm to simulate a high resolution electron microscope image of a wedge-shaped crystal is...
The limits of high resolution electron microscopy (HREM) applied to quantum-sized structures were in...
We combine droplet epitaxy with low-energy electron microscopy imaging techniques to map the surface...
For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincb...
due to their special mechanical, electrical and optical behavior. The correlation between these extr...
Crystal damage induced by irradiation is investigated using transmission electron microscopy (TEM) c...
Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained f...
A full, three{dimensional (3D) ray tracing approach is developed to simulate the caustics visible i...
Droplet epitaxy of GaAs is studied in real time using in situ surface electron microscopy. The resul...
Droplet epitaxy is a recently developed variant of molecular beam epitaxy (MBE) which is used to for...
We discuss a new interpretation of mirror electron microscopy (MEM) images, whereby electric field d...
We discuss an intuitive approach to interpreting mirror electron microscopy (MEM) images, whereby im...
We develop several approaches to understand and interpret image contrast in mirror electron microsco...
High resolution electron microscopy is now often used to determine the structure of nano‐materials: ...
GaAs based communication and optoelectronic devices are widely used in our daily lives. Applications...
A new algorithm to simulate a high resolution electron microscope image of a wedge-shaped crystal is...
The limits of high resolution electron microscopy (HREM) applied to quantum-sized structures were in...
We combine droplet epitaxy with low-energy electron microscopy imaging techniques to map the surface...
For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincb...
due to their special mechanical, electrical and optical behavior. The correlation between these extr...
Crystal damage induced by irradiation is investigated using transmission electron microscopy (TEM) c...