Crystal damage induced by irradiation is investigated using transmission electron microscopy (TEM) coupled to molecular dynamics (MD) calculations. The displacement cascades are simulated for energies ranging from 10 to 50 keV in Al, Ni and Cu and for times of up to a few tens of picoseconds. Samples are then used to perform simulations of the TEM images that one could observe experimentally. Diffraction contrast is simulated using a method based on the multislice technique. It appears that the cascade induced damage in Al imaged in weak beam exhibits little contrast, which is too low to be experimentally visible, while in Ni and Cu a good contrast is observed. The number of visible clusters is always lower than the actual one. Conversely, ...
A brief outline is given of the processes of knock-on damage and electronic damage in electron micro...
A brief outline is given of the processes of knock-on damage and electronic damage in electron micro...
A brief outline is given of the processes of knock-on damage and electronic damage in electron micro...
TEM image simulations are used to couple the results from molecular dynamics (MD) simulations to exp...
A simulation method which combines molecular dynamics and calculated TEM imaging is presented. The s...
Dislocations in crystalline materials have a strong impact on mechanical properties. As a result, id...
We present a combined experimental and simulation approach to studying the primary damage caused by ...
We review the use of transmission electron microscopy (TEM) and associated techniques for the analys...
With full knowledge of a material's atomistic structure, it is possible to predict any macroscopic p...
With full knowledge of a material’s atomistic structure, it is possible to predict any macroscopic p...
In order to clarify the limits of HREM observations of defects due to radiation damage, a simulation...
With full knowledge of a material's atomistic structure, it is possible to predict any macroscopic p...
Dislocation loops and stacking fault tetrahedra (SFT) have been formed in Ag, Au, and Cu due to irra...
Neutrons and high-energy ions incident upon a solid can initiate a displacement collision cascade of...
A brief outline is given of the processes of knock-on damage and electronic damage in electron micro...
A brief outline is given of the processes of knock-on damage and electronic damage in electron micro...
A brief outline is given of the processes of knock-on damage and electronic damage in electron micro...
A brief outline is given of the processes of knock-on damage and electronic damage in electron micro...
TEM image simulations are used to couple the results from molecular dynamics (MD) simulations to exp...
A simulation method which combines molecular dynamics and calculated TEM imaging is presented. The s...
Dislocations in crystalline materials have a strong impact on mechanical properties. As a result, id...
We present a combined experimental and simulation approach to studying the primary damage caused by ...
We review the use of transmission electron microscopy (TEM) and associated techniques for the analys...
With full knowledge of a material's atomistic structure, it is possible to predict any macroscopic p...
With full knowledge of a material’s atomistic structure, it is possible to predict any macroscopic p...
In order to clarify the limits of HREM observations of defects due to radiation damage, a simulation...
With full knowledge of a material's atomistic structure, it is possible to predict any macroscopic p...
Dislocation loops and stacking fault tetrahedra (SFT) have been formed in Ag, Au, and Cu due to irra...
Neutrons and high-energy ions incident upon a solid can initiate a displacement collision cascade of...
A brief outline is given of the processes of knock-on damage and electronic damage in electron micro...
A brief outline is given of the processes of knock-on damage and electronic damage in electron micro...
A brief outline is given of the processes of knock-on damage and electronic damage in electron micro...
A brief outline is given of the processes of knock-on damage and electronic damage in electron micro...