The work function of p-type and n-type metal electrode materials deposited by RF magnetron sputtering in argon was determined by CV measurements on MOS capacitors. In addition, the work function of p-type and n-type nitride electrode materials deposited by rf magnetron sputtering in nitrogen was also determined by CV measurements on MOS capacitors. The metals deposited were molybdenum, tantalum, titanium, and aluminum. The nitrides deposited contained the metals listed previously with the exception of aluminum. The work functions were determined to be 4.70 +1- 0.49 eV for Al, 4.46 +1- 0.26 eV for Mo, and 4.22 eV for Ta. Capacitors of the other films are still in the progress for fabrication or require further testing. The work function resu...
Silicon Nitride (Si3N4) sacrificial replacement gate were fabricated using the nitride cast method. ...
This project dealt with the design and installation of a TCA bubbler system. Considerations for safe...
Resonant Interband Tunnel Diodes (RITD) with device sizes ranging from r=20μm to r=50nm (mask define...
The objective of this project was to investigate the possibility of producing array of microplasma, ...
A study has been performed to investigate oxynitrides as thin gate dielectrics. The method of nitrid...
Titanium nitride was studied for use in two applications: as a barrier metal in an aluminum metalliz...
The technical features in manufacturing press non-ferrous metal articles have been considered via th...
Conductive tin oxide films were deposited through reactive sputtering on glass substrates under diff...
A dry etch S1O2 process was optimized using the Plasmatrac 2406 RIE etcher at RIT, while maintaining...
The effects of an n-type and p-type doped polysilicon gate fabricated over both an n-type and p-type...
KTI-820, a positive photoresist was hardened utilizing two different methods. The PRIST technique in...
The Tegal 700 plasma etcher was used to etch trenches into four micron deep p-type diffused resistor...
The design and fabrication of N-channel MOS transistors with effective gate lengths of 0.5μm or smal...
A bilevel metallization process using aluminum with 1~ silicon for the Metal 1 layer, pure aluminum ...
A Si3N4 etch process using a Plasmatherm 2406 etcher and SF6 was determined. RS1/Discover was used t...
Silicon Nitride (Si3N4) sacrificial replacement gate were fabricated using the nitride cast method. ...
This project dealt with the design and installation of a TCA bubbler system. Considerations for safe...
Resonant Interband Tunnel Diodes (RITD) with device sizes ranging from r=20μm to r=50nm (mask define...
The objective of this project was to investigate the possibility of producing array of microplasma, ...
A study has been performed to investigate oxynitrides as thin gate dielectrics. The method of nitrid...
Titanium nitride was studied for use in two applications: as a barrier metal in an aluminum metalliz...
The technical features in manufacturing press non-ferrous metal articles have been considered via th...
Conductive tin oxide films were deposited through reactive sputtering on glass substrates under diff...
A dry etch S1O2 process was optimized using the Plasmatrac 2406 RIE etcher at RIT, while maintaining...
The effects of an n-type and p-type doped polysilicon gate fabricated over both an n-type and p-type...
KTI-820, a positive photoresist was hardened utilizing two different methods. The PRIST technique in...
The Tegal 700 plasma etcher was used to etch trenches into four micron deep p-type diffused resistor...
The design and fabrication of N-channel MOS transistors with effective gate lengths of 0.5μm or smal...
A bilevel metallization process using aluminum with 1~ silicon for the Metal 1 layer, pure aluminum ...
A Si3N4 etch process using a Plasmatherm 2406 etcher and SF6 was determined. RS1/Discover was used t...
Silicon Nitride (Si3N4) sacrificial replacement gate were fabricated using the nitride cast method. ...
This project dealt with the design and installation of a TCA bubbler system. Considerations for safe...
Resonant Interband Tunnel Diodes (RITD) with device sizes ranging from r=20μm to r=50nm (mask define...