Interfaces between ferromagnetic (FM) and antiferromagnetic (AFM) materials constitute one of the active elements of new magneto-electronic devices, which exploit the electron spin rather than its charge for information processing and transfer. The exchange interactions at the interface formed between the FM and the AFM layers result in an unidirectional magnetic anisotropy, the so called exchange bias, of which a quantitative explanation is presently lacking [ ]. Exchange bias leads to a shift of the magnetic hysterisis curve. In many cases, real FM/AFM interfaces are not ideal in their structure and chemistry and their atomic configuration is expected to have a very strong influence on the magnetic couplings between the two materials. W...