Micromachined filters for 38 and 77 GHz supported on thin membranes

This paper presents the fabrication processes for micromachined millimetre-wave devices, on two different types of semiconductor substrates. The first process uses micromachining on high-resistivity (100) oriented silicon. A three-layer dielectric membrane, with a total thickness of 1.5 um is used as support for the millimetre-wave structures. This process was used for the manufacturing of two coupled line filters, wih central operating frequencies of 38 and 77 GHz, respectively. The second process is based on GaAs micromachining. For the first time, a 2.2 um thin GaAs/AIGaAs membrane, obtained by molecular beam epitaxy growth and micromachining of semi-insulating (100) GaAs, is used as support for millimetre-wave filter structures. Cascaded coplanar waveguide open-end series stubs filter type structures, with central frequences of 38 and 77 GHz, respectively, were designed and manufactured on a GaAs micromachined substrate. 'On wafer' measurements for the filter structures were performed. Losses of less than 1.5 dB at 38 GHz and less than 2 dB at 77 GHz have been obtained for both the silicon as well as for the GaAs-based micromachined filter