Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies
- Lynch, S.A.
- Bates, R.
- Paul, D.J.
- Norris, D.J.
- Cullis, A.G.
- Ikonic, Z.
- Kelsall, R.W.
- Harrison, P.
- Arnone, D.D.
- Pidgeon, C.R.
DOIAbstract
The quantum cascade laser provides one possible method of realizing high efficiency light emitters in indirect band gap materials such as silicon. Electroluminescence results from Si/SiGe quantum cascade emitters are presented demonstrating edge emission from heavy-hole to heavy-hole transitions and light-hole to heavy-hole transitions. In surface-normal emission, only light-hole to heavy-hole electroluminescence is observed as predicted by theory. Intersubband emission is demonstrated at 2.9 THz (103 μm wavelength), 8.9 THz (33.7 μm), and 16.2 THz (18.5 μm) from the Si/SiGe quantum cascade heterostructures
Add to ORKG