Intrinsic semiconductors Intrinsic semiconductors have negligible concentrations of impurity atoms. Their electrical conductivity arises primarily from electrons excited into the otherwise empty conduction band from the otherwise filled valence band—usually by absorbing sufficient energy from phonons at finite temperature. Exciting an electron into the conduction band leaves a vacant state in the valence band. An electron at lower energy in the valence band can fill this vacant state. That, in turn, makes available a possible state for yet another valence band electron to fill. In other words, the excitation of the electron provides a mobile charge in the conduction band as well as a mobile unoccupied state in the valence band. When an ext...
Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors...
In the past several decades, semiconductor materials have been used in a wide range of electronic de...
Minority carrier transport properties and the effects of electron irradiation/injection were studied...
Intrinsic semiconductors Intrinsic semiconductors have negligible concentrations of impurity atoms....
The electrons of an atom occupy certain energy levels when the atom is far from other atoms. When a ...
In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states ...
My research focuses on the behavior of electrons (negatively charged particles repelling each other ...
Landau-Fermi liquid theory, with its pivotal assertion that electrons in metals can be simply unders...
For nondegenerate bulk semiconductors, we have used the virial theorem to derive an expression for t...
A semiconducting material is defined as one that is electrically insulating at a temperature of abs...
Understanding the nature of polarons – the fundamental charge carriers in molecular semiconductors –...
Introductory textbooks in solid state physics usually present the hydrogenic impurity model to calcu...
We clarify characteristics of the electronic structure of the carrier system in small semiconductor ...
Carrier doping by the electric field effect has emerged as an ideal route for monitoring many-body p...
Defects in the crystal lattice are by their very nature a semiconductor creates different energy lev...
Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors...
In the past several decades, semiconductor materials have been used in a wide range of electronic de...
Minority carrier transport properties and the effects of electron irradiation/injection were studied...
Intrinsic semiconductors Intrinsic semiconductors have negligible concentrations of impurity atoms....
The electrons of an atom occupy certain energy levels when the atom is far from other atoms. When a ...
In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states ...
My research focuses on the behavior of electrons (negatively charged particles repelling each other ...
Landau-Fermi liquid theory, with its pivotal assertion that electrons in metals can be simply unders...
For nondegenerate bulk semiconductors, we have used the virial theorem to derive an expression for t...
A semiconducting material is defined as one that is electrically insulating at a temperature of abs...
Understanding the nature of polarons – the fundamental charge carriers in molecular semiconductors –...
Introductory textbooks in solid state physics usually present the hydrogenic impurity model to calcu...
We clarify characteristics of the electronic structure of the carrier system in small semiconductor ...
Carrier doping by the electric field effect has emerged as an ideal route for monitoring many-body p...
Defects in the crystal lattice are by their very nature a semiconductor creates different energy lev...
Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors...
In the past several decades, semiconductor materials have been used in a wide range of electronic de...
Minority carrier transport properties and the effects of electron irradiation/injection were studied...