RECOMBINANT AND PHOTOSENSITIVITY INCREASING DEFECTS.

Defects in the crystal lattice are by their very nature a semiconductor creates different energy levels in the forbidden area. These energy levels ionization, i.e. near and far from conduction and valence fields to the location looking at charge of carriers to live on time each different effect shows [1-2]. The following in the picture three different activation to energy have has been half conductor given. In the picture E 1 energetic levels conductivity and valent to the fields very near is located that it was for, conductivity in the field electrons to himself pulling win received with in them electrons heat energy is transferred back to the field of conduction at the expense of kT and this process all the time may occur. Likewise near the valence band absorbing the holes in the valence field from the level where it is located and returning to its position possible [3]