Add to ORKGComposition, atomic transport, and chemical reaction were investigated following annealing in O2 of ultrathin HfO2 films deposited on Si substrates thermally nitrided in NO. The as-prepared thin film composition was established by Rutherford backscattering spectrometry, nuclear reaction analysis, and x-ray photoelectron spectroscopy as a HfO2 film on an intermediate layer containing silicon oxynitride, hafnium silicate, and possibly hafnium–silicon oxynitride. O penetration, incorporation in the bulk of the HfO2 /SiOxNy structure, and oxidation of the substrate forming SiO2 were observed
HfO2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate....
17th International Conference on Ion Beam Analysis, Seville, SPAIN, JUN 26-JUL 01, 2005International...
An investigation of the electrical and physical properties of the HfOxNy films in the mixtures of di...
Composition, atomic transport, and chemical reaction were investigated following annealing in O2 of ...
Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si substrates u...
HfO2 /SiO2/Si 001 thin film structures were exposed at room temperature to water vapor isotopically ...
Rapid thermal annealing at 1000 °C of (HfO2)12x(SiO2)x pseudobinary alloy films deposited on Si were...
The chemical bonding of O atoms in HfO2 films on Si was investigated by in situ x-ray photoelectron ...
A hot wall Atomic Layer Deposition (ALD) flow reactor equipped with a Quartz Crystal Microbalance (Q...
We have deposited thin films (3.5, 7.5 and 22 nm) by atomic layer deposition (ALD) using HfCl4 and H...
Oxygen transport and incorporation were investigated following postdeposition annealing of metal-oxi...
ond for e 18 i (1 al c 2 ms. x y 800 8C annealing in N2 ambient. Meanwhile the HfOxNy films can also...
Abstract In this work, hafnium oxide (HfO2) thin films are deposited on p-type Si substrates by remo...
Thin layers of HfO2 grown on the 1 amp; 8201;0 amp; 8201;0 Si crystal surface using atomic layer de...
The physicochemical and electrical properties of atomic-layer-deposited HfO2 films grown using O-3 g...
HfO2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate....
17th International Conference on Ion Beam Analysis, Seville, SPAIN, JUN 26-JUL 01, 2005International...
An investigation of the electrical and physical properties of the HfOxNy films in the mixtures of di...
Composition, atomic transport, and chemical reaction were investigated following annealing in O2 of ...
Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si substrates u...
HfO2 /SiO2/Si 001 thin film structures were exposed at room temperature to water vapor isotopically ...
Rapid thermal annealing at 1000 °C of (HfO2)12x(SiO2)x pseudobinary alloy films deposited on Si were...
The chemical bonding of O atoms in HfO2 films on Si was investigated by in situ x-ray photoelectron ...
A hot wall Atomic Layer Deposition (ALD) flow reactor equipped with a Quartz Crystal Microbalance (Q...
We have deposited thin films (3.5, 7.5 and 22 nm) by atomic layer deposition (ALD) using HfCl4 and H...
Oxygen transport and incorporation were investigated following postdeposition annealing of metal-oxi...
ond for e 18 i (1 al c 2 ms. x y 800 8C annealing in N2 ambient. Meanwhile the HfOxNy films can also...
Abstract In this work, hafnium oxide (HfO2) thin films are deposited on p-type Si substrates by remo...
Thin layers of HfO2 grown on the 1 amp; 8201;0 amp; 8201;0 Si crystal surface using atomic layer de...
The physicochemical and electrical properties of atomic-layer-deposited HfO2 films grown using O-3 g...
HfO2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate....
17th International Conference on Ion Beam Analysis, Seville, SPAIN, JUN 26-JUL 01, 2005International...
An investigation of the electrical and physical properties of the HfOxNy films in the mixtures of di...